BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK9609-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 131 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Rise Time: 149 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 197 ns
• Part # Aliases: BUK9609-55A,118

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK9609-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9609-55A
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Quick reference data
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2011
…continued
Simplified outline
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
GS
SOT404 (D2PAK)
= 75 A; V
Figure 13
= 44 V; T
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
D
sup
3
= 25 A;
j
GS
N-channel TrenchMOS logic level FET
= 25 °C;
≤ 55 V;
= 5 V;
BUK9609-55A
Graphic symbol
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
-
29
Version
SOT404
D
S
Max Unit
400
-
2 of 14
mJ
nC