SIA912DJ-T1-E3 Vishay/Siliconix, SIA912DJ-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SIA912DJ-T1-E3
• Description: MOSFET 12V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA912DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 40 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.9 W
• Rise Time: 15 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 35 ns
• Part # Aliases: SIA912DJ-E3

SiA912DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74953.
www.vishay.com
6
0.01
0.01
0.1
1
1
10
10
-4
0.02
-4
0.05
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
S-80436-Rev. B, 03-Mar-08
DM
Document Number: 74953
100
Z
th JA
th JA
t
t
1
2
(t)
= 85 °C/W
1000
10
-1