SI4818DY-E3 Vishay/Siliconix, SI4818DY-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4818DY-E3
• Description: MOSFET 30V 6.3/9.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI4818DY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.5 A, 7 A
• Resistance Drain-source Rds (on): 22 mOhms, 15.5 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W, 1.25 W
• Rise Time: 5 ns
• Typical Turn-off Delay Time: 26 ns at Channel 1, 44 ns at Channel 2

Si4818DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
10
40
10
8
6
4
2
0
1
- 50
0
0
- 25
V
I
D
Source-Drain Diode Forward Voltage
0.2
DS
= 9.5 A
= 15 V
6
V
Q
SD
0
T
0.4
g
J
Threshold Voltage
T
- Total Gate Charge (nC)
- Source-to-Drain Voltage (V)
= 150 °C
J
- Temperature (°C)
Gate Charge
25
12
0.6
50
I
D
0.8
= 250 µA
18
T
75
J
= 25 °C
1.0
100
24
1.2
125
150
1.4
30
0.05
0.04
0.03
0.02
0.01
0.00
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
0
- 50
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 9.5 A
= 10 V
2
V
0.01
GS
0
T
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
Time (s)
S09-0867-Rev. C, 18-May-09
0.1
50
Document Number: 71122
6
75
I
D
100
= 9.5 A
1
8
125
150
10
10