SI7415DN-T1 Vishay/Siliconix, SI7415DN-T1 Datasheet

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SI7415DN-T1

Manufacturer Part Number
SI7415DN-T1
Description
MOSFET 60V 5.7A 1.5W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI7415DN-T1

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Resistance Drain-source Rds (on)
65 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 W
Rise Time
12 ns
Factory Pack Quantity
3000
Tradename
TrenchFET/PowerPAK
Typical Turn-off Delay Time
22 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7415DN-T1
Manufacturer:
TI
Quantity:
17
Part Number:
SI7415DN-T1-E3
Manufacturer:
TexasInstruments
Quantity:
506
Part Number:
SI7415DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7415DN-T1-E3
0
Part Number:
SI7415DN-T1-GE3
Manufacturer:
C&K
Quantity:
1 001
Part Number:
SI7415DN-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
50 525
Part Number:
SI7415DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI7415DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7415DN-T1-GE3
0
Company:
Part Number:
SI7415DN-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71691
S-83043-Rev. E, 22-Dec-08
Ordering Information: Si7415DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 60
(V)
8
3.30 mm
D
7
D
6
D
Si7415DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAK 1212-8
0.110 at V
0.065 at V
Bottom View
5
D
R
DS(on)
J
a
= 150 °C)
1
a
GS
GS
S
= - 4.5 V
(Ω)
= - 10 V
2
S
P-Channel 60-V (D-S) MOSFET
3
a
S
3.30 mm
4
G
a
b, c
A
I
= 25 °C, unless otherwise noted
D
- 5.7
- 4.4
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Fast Switching
• Load Switches
• Half-Bridge Motor Drives
• High Voltage Non-Synchronous Buck Converters
Symbol
Symbol
T
Available
R
R
J
V
V
I
P
, T
DM
thJC
I
I
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
- 5.7
- 4.6
- 3.2
10 s
3.8
2.0
1.9
26
65
G
- 55 to 150
P-Channel MOSFET
± 20
- 60
- 30
260
Steady State
Maximum
S
D
- 3.6
- 2.9
- 1.3
1.5
2.4
0.8
33
81
Vishay Siliconix
Si7415DN
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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