SI7415DN-T1 Vishay/Siliconix, SI7415DN-T1 Datasheet

SI7415DN-T1

Manufacturer Part Number

SI7415DN-T1

Description

MOSFET 60V 5.7A 1.5W

Manufacturer

Vishay/Siliconix

Datasheet

1.SI7415DN-T1.pdf (11 pages)

Specifications of SI7415DN-T1

Product Category

MOSFET

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3.6 A

Resistance Drain-source Rds (on)

65 mOhms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PowerPAK 1212-8

Fall Time

12 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

1.5 W

Rise Time

12 ns

Factory Pack Quantity

3000

Tradename

TrenchFET/PowerPAK

Typical Turn-off Delay Time

22 ns

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7415DN-T1

Manufacturer:

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7415DN-T1-E3

Manufacturer:

TexasInstruments

Quantity:

506

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7415DN-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SI7415DN-T1-E3

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7415DN-T1-GE3

Manufacturer:

C&K

Quantity:

1 001

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7415DN-T1-GE3

Manufacturer:

Vishay/Siliconix

Quantity:

50 525

Company:

HardFindElectronics Ltd

Part Number:

SI7415DN-T1-GE3

Manufacturer:

VISHAY

Quantity:

150

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7415DN-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SI7415DN-T1-GE3

Company:

H&T Electronics

Part Number:

SI7415DN-T1-GE3

Quantity:

70 000

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Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71691

S-83043-Rev. E, 22-Dec-08

Ordering Information: Si7415DN-T1-E3 (Lead (Pb)-free)

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

- 60

(V)

3.30 mm

Si7415DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

PowerPAK 1212-8

0.110 at V

0.065 at V

Bottom View

DS(on)

= 150 °C)

= - 4.5 V

(Ω)

= - 10 V

P-Channel 60-V (D-S) MOSFET

3.30 mm

b, c

= 25 °C, unless otherwise noted

- 5.7

- 4.4

Steady State

(A)

t ≤ 10 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• Fast Switching

• Load Switches

• Half-Bridge Motor Drives

• High Voltage Non-Synchronous Buck Converters

Symbol

Available

, T

thJC

thJA

stg

Power MOSFET

Typical

- 5.7

- 4.6

- 3.2

10 s

3.8

2.0

1.9

- 55 to 150

P-Channel MOSFET

± 20

- 60

- 30

260

Steady State

Maximum

- 3.6

- 2.9

- 1.3

1.5

2.4

0.8

Vishay Siliconix

Si7415DN

www.vishay.com

°C/W

Unit

°C

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