BTA312-800CT/DG,12 NXP Semiconductors, BTA312-800CT/DG,12 Datasheet - Page 3

• Manufacturer Part Number: BTA312-800CT/DG,12
• Description: Triacs 3Q Hi-Com Triac
• Manufacturer: NXP Semiconductors

Specifications of BTA312-800CT/DG,12

• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
BTA312-800CT
Product data sheet
Symbol
Fig. 1.
I
I
dI
I
P
P
T
T
TSM
2
GM
stg
j
t
GM
G(AV)
T
/dt
I
T(RMS )
(A)
16
12
8
4
0
RMS on-state current as a function of mounting
base temperature; maximum values
-50
Parameter
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
003a a b688
T
mb
(°C)
150
Conditions
full sine wave; T
t
full sine wave; T
t
t
I
p
p
p
T
over any 20 ms period
= 20 ms;
= 16.7 ms
= 10 ms; SIN
= 20 A; I
4 October 2012
G
Fig.
Fig. 2.
= 0.2 A; dI
I
4;
j(init)
j(init)
T(RMS )
(A)
Fig. 5
50
40
30
20
10
= 25 °C;
= 25 °C;
0
10
f = 50 Hz; T
RMS on-state current as a function of surge
duration; maximum values
-2
G
/dt = 0.2 A/µs
mb
10
= 125 °C
-1
BTA312-800CT
1
s urge duration (s )
Min
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2012. All rights reserved
3Q Hi-Com Triac
003a a f738
Max
100
110
50
100
2
5
0.5
150
150
10
Unit
A
A
A
A/µs
A
W
W
°C
°C
2
3 / 12
s