BTA316-600E/DGQ NXP Semiconductors, BTA316-600E/DGQ Datasheet - Page 4

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BTA316-600E/DGQ

Manufacturer Part Number
BTA316-600E/DGQ
Description
Triacs
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA316-600E/DGQ

Rohs
yes
NXP Semiconductors
BTA316-600E
Product data sheet
Fig 3.
Fig 4.
(W)
P
tot
I
160
120
(A)
TSM
80
40
20
15
10
0
5
0
values
Total power dissipation as a function of RMS on-state current; maximum values
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
0
1
conduction
(degrees)
angle,
120
180
30
60
90
2
factor
form
1.57
2.8
2.2
1.9
a
4
4
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 23 November 2010
6
8
10
10
2
12
number of cycles (n)
BTA316-600E
I
T
T
j(init)
14
= 180
1/f
= 25 C max
120
I
90
60
30
T(RMS)
© NXP B.V. 2010. All rights reserved.
3Q Hi-Com Triac
003aab689
003aab668
I
TSM
(A)
t
10
16
3
4 of 14

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