BTA212-600B/DG,127 NXP Semiconductors, BTA212-600B/DG,127 Datasheet - Page 3

• Manufacturer Part Number: BTA212-600B/DG,127
• Description: Triacs 3Q HI-COM TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTA212-600B/DG,127

• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
Three quadrant triacs
high commutation
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dI
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
com
D
/dt
Semiconductors
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
2
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; gate open circuit
V
without snubber; gate open circuit
I
dI
T
TM
D
D
D
D
D
D
DM
DM
G
= 17 A
/dt = 5 A/μs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 12 A; V
= 67% V
= 400 V; T
DRM(max)
T
GT
GT
T
D
T
DRM(max)
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= V
= 0.1 A; T
j
j
= 125 ˚C; I
2
= 125 ˚C
DRM(max)
; T
j
= 125 ˚C;
j
; I
= 125 ˚C
G
T(RMS)
= 0.1 A;
= 12 A;
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
1000
MIN.
MIN.
MIN.
0.25
2
2
2
-
-
-
-
-
-
-
-
-
-
-
-
BTA212 series B
TYP.
TYP.
TYP.
4000
1.3
0.7
0.4
0.1
60
18
21
34
31
34
30
31
24
2
Product specification
-
-
MAX.
MAX.
MAX.
1.5
2.0
1.6
1.5
0.5
50
50
50
60
90
60
60
-
-
-
-
-
Rev 1.200
UNIT
UNIT
UNIT
A/ms
V/μs
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
μs
V
V
V