BC817-T Rectron, BC817-T Datasheet
BC817-T
Manufacturer Part Number
BC817-T
Description
Transistors Bipolar - BJT NPN 0.8A 45V Gen Pur
Manufacturer
Rectron
Datasheet
1.BC817-T.pdf
(2 pages)
Specifications of BC817-T
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
50 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Dc Current Gain Hfe Max
600
Maximum Power Dissipation
250 mW
Factory Pack Quantity
3000
Desription
Collector-Emitter Voltage
Collector Emitter Voltage (open base) I
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - (DC)
Base Current - Peak
Total Power Dissipation up to T
Storage Temperature
Junction Temperature
From junction to ambient
(V
BE
= 0V)
amb
= 25 °C
C
= 10mA
o
SYMBOL
R
(-I
V
V
V
T
I
P
I
th(j-a)
CEO
CM
T
CES
EBO
I
I
BM
EM
stg
C
B
tot
J
)
(-55 to +150)
VALUE
1000
1000
500
100
200
250
150
1
2
3
500
50
45
5
BASE
EMITTER
COLLECTOR
UNITS
k / W
mW
mA
mA
mA
mA
mA
V
V
V
C
C
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BC817-T Summary of contents
Page 1
Desription Collector-Emitter Voltage (V = 0V) BE Collector Emitter Voltage (open base) I Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - (DC) Base Current - Peak Total Power Dissipation up to ...
Page 2
Collector Cut off Current Emitter cut-off current Base Emitter on Voltage Saturation Voltage DC Current Gain Collector Capacitance Transition Frequency 25 C unless otherwise specified) Symbol Test Conditions V = 20V 25° ...