BCX53-10 /T3 NXP Semiconductors, BCX53-10 /T3 Datasheet - Page 6

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BCX53-10 /T3

Manufacturer Part Number
BCX53-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCX53-10 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
100 V
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 150 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Maximum Power Dissipation
1300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCX53-10,135
NXP Semiconductors
6. Thermal characteristics
BCP53_BCX53_BC53PA
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
BCP53
BCX53
BC53PA
BCP53
BCX53
BC53PA
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 19 October 2011
BCP53; BCX53; BC53PA
Conditions
in free air
80 V, 1 A PNP medium power transistors
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[4]
[5]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
192
125
93
250
132
93
298
151
114
154
76
16
16
20
2
.
2
2
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
.
.
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