BCP54-10 /T3 NXP Semiconductors, BCP54-10 /T3 Datasheet - Page 14

• Manufacturer Part Number: BCP54-10 /T3
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE13
• Manufacturer: NXP Semiconductors

Specifications of BCP54-10 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 45 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 180 MHz
• Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Dc Current Gain Hfe Max: 100 at 150 mA at 2 V
• Maximum Power Dissipation: 960 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCP54-10,135

NXP Semiconductors
8. Test information
9. Package outline
BCP54_BCX54_BC54PA
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 19. Package outline SOT223 (SC-73)
Fig 20. Package outline SOT89 (SC-62/TO-243)
All information provided in this document is subject to legal disclaimers.
Dimensions in mm
Dimensions in mm
Rev. 8 — 21 October 2011
2.6
2.4
7.3
6.7
3.7
3.3
0.53
0.40
1
1.5
1
4.6
4.4
1.8
1.4
2.3
3
BCP54; BCX54; BC54PA
2
6.7
6.3
3.1
2.9
4.6
2
3
45 V, 1 A NPN medium power transistors
4
0.48
0.35
3
0.8
0.6
1.2
0.8
1.1
0.7
1.6
1.4
1.8
1.5
0.32
0.22
0.44
0.23
4.25
3.75
04-11-10
06-08-29
© NXP B.V. 2011. All rights reserved.
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