BCV62B T/R NXP Semiconductors, BCV62B T/R Datasheet - Page 2

• Manufacturer Part Number: BCV62B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV62B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV62B,215

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BCV62
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
[1]
Symbol
Transistor TR2
h
Pin
1
2
3
4
Type number
BCV62
BCV62A
BCV62B
BCV62C
Type number
BCV62
BCV62A
BCV62B
BCV62C
FE
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Quick reference data
Pinning
Ordering information
Marking codes
Parameter
DC current gain
BCV62
BCV62A
BCV62B
BCV62C
collector TR2;
collector TR1
emitter TR1
emitter TR2
Description
base TR1 and TR2
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 4 — 26 July 2010
Description
plastic surface-mounted package; 4 leads
…continued
Conditions
V
CE
= −5 V; I
Marking code
3M*
3J*
3K*
3L*
PNP general-purpose double transistors
C
Simplified outline
= −2 mA
4
1
[1]
2
3
Min
100
100
220
420
Typ
-
-
-
-
Graphic symbol
© NXP B.V. 2010. All rights reserved.
TR2
BCV62
4
1
Max
800
250
475
800
Version
SOT143B
006aaa843
3
2
TR1
Unit
2 of 14