BC817-25LT3 ON Semiconductor, BC817-25LT3 Datasheet - Page 4

• Manufacturer Part Number: BC817-25LT3
• Description: Transistors Bipolar - BJT 500mA 50V NPN
• Manufacturer: ON Semiconductor

Specifications of BC817-25LT3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 45 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 225 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 10000

1.0
0.8
0.6
0.4
0.2
0
0.01
T
J
= 25°C
I
C
= 10 mA
Figure 5. Saturation Region
0.1
I
B
, BASE CURRENT (mA)
100 mA
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
1
100
300 mA
10
1
0.1
10
500 mA
V
Figure 7. Capacitances
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1
100
4
C
+1
ib
-1
-2
0
10
1
Figure 6. Temperature Coefficients
q
VC
for V
C
ob
I
C
, COLLECTOR CURRENT (mA)
CE(sat)
q
100
VB
10
for V
BE
100
1000