M25P40-VMW6TGB NUMONYX, M25P40-VMW6TGB Datasheet - Page 41

• Manufacturer Part Number: M25P40-VMW6TGB
• Description: IC FLASH 4MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P40-VMW6TGB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P40-VMW6TGBTR

Table 17.
1. 150 nm technology devices are identified by process identification digit "X" in the device marking.
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
Table 18.
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC measurement I/O waveform
Symbol
Symbol
t
PP
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256)
t
t
t
SE
BE
W
C
—
—
—
—
(2)
L
Load capacitance
Input rise and fall times
Input pulse voltages
Input timing reference voltages
Output timing reference voltages
Alt.
AC measurement conditions
Instruction times, process technology 150 nm
—
—
—
—
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
0.8V CC
0.2V CC
Input Levels
Test conditions specified in
Parameter
Parameter
Table 10
Timing Reference Levels
Input and Output
and
Min.
Min.
0.2V
0.3V
—
—
—
—
—
—
Table 18
(1)
CC
CC
V
0.7V CC
0.5V CC
0.3V CC
AI07455
CC
0.4+n*1/
30
to 0.8V
to 0.7V
256
Typ.
/ 2
1.4
4.5
5
1
(2)
Max.
CC
CC
5
Max.
15
10
5
3
Unit
pF
ns
Unit
V
V
V
ms
ms
41/61
s
s