M25P80-VMW6TG NUMONYX, M25P80-VMW6TG Datasheet - Page 36

IC FLASH 8MBIT 75MHZ 8SOIC

M25P80-VMW6TG

Manufacturer Part Number
M25P80-VMW6TG
Description
IC FLASH 8MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P80-VMW6TG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Package
8SO W
Cell Type
NOR
Density
8 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 16
Timing Type
Synchronous
Interface Type
Serial-SPI
Access Time (max)
8ns
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC W
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1M
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P80-VMW6TG
M25P80-VMW6TGTR

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Power-up and Power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V
A safe configuration is provided in
To avoid data corruption and inadvertent write operations during Power-up, a Power-On
Reset (POR) circuit is included. The logic inside the device is held reset while V
than the POR threshold value, V
respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Sector Erase
(SE), Bulk Erase (BE) and Write Status Register (WRSR) instructions until a time delay of
t
correct operation of the device is not guaranteed if, by this time, V
No Write Status Register, Program or Erase instructions should be sent until the later
occurance of:
These values are specified in
If the delay, t
selected for READ instructions even if the t
At Power-up, the device is in the following state:
Normal precautions must be taken for supply rail decoupling, to stabilize the V
device in a system should have the V
package pins. (Generally, this capacitor is of the order of 100 nF.)
At Power-down, when V
(POR) threshold value, V
any instruction. (The designer needs to be aware that if a Power-down occurs while a Write,
Program or Erase cycle is in progress, some data corruption can result.)
PUW
V
V
t
t
The device is in the Standby mode (not the Deep Power-down mode).
The Write Enable Latch (WEL) bit is reset.
The Write In Progress (WIP) bit is reset.
PUW
VSL
has elapsed after the moment that V
CC
SS
(min) at Power-up, and then for a further delay of t
at Power-down
after V
after V
VSL
CC
, has elapsed, after V
CC
passed the V
passed the V
CC
WI
, all operations are disabled and the device does not respond to
drops from the operating voltage, to below the Power On Reset
Table
CC
WI
CC
) until V
WI
Section 3: SPI
– all operations are disabled, and the device does not
(min) level
8.
threshold
CC
CC
rail decoupled by a suitable capacitor close to the
has risen above V
CC
CC
PUW
reaches the correct value:
rises above the V
delay is not yet fully elapsed.
modes.
CC
VSL
(min), the device can be
WI
CC
threshold. However, the
is still below V
CC
CC
feed. Each
CC
is less
(min).

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