M29W800DB45ZE6E NUMONYX, M29W800DB45ZE6E Datasheet - Page 30

• Manufacturer Part Number: M29W800DB45ZE6E
• Description: IC FLASH 8MBIT 45NS 48TFBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W800DB45ZE6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 11. Read mode AC waveforms
Table 12.
1. Sampled only, not 100% tested.
30/52
t
t
t
Symbol
t
GHQZ
ELQX
GLQX
EHQZ
t
t
t
t
t
t
t
t
t
t
t
EHQX
GHQX
BHQV
AVQV
GLQV
AXQX
ELQV
ELBH
BLQZ
AVAV
ELBL
A0-A18/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
BYTE
(1)
(1)
(1)
(1)
t
t
t
t
t
FHQV
t
ELFH
FLQZ
Read AC characteristics
ELFL
t
t
t
Alt
ACC
t
t
t
t
OLZ
RC
CE
OE
OH
HZ
DF
LZ
Address Valid to Next Address Valid
Address Valid to Output Valid
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or Address
Transition to Output Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
tELBL/tELBH
Parameter
tAVQV
tBHQV
tELQX
tELQV
tGLQX
tGLQV
tAVAV
VALID
Test condition
E = V
E = V
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
tBLQZ
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
VALID
45 ns
tGHQX
tGHQZ
45
45
45
25
20
20
25
30
0
0
0
5
M29W800D
70 ns
tEHQZ
70
70
70
30
25
25
25
30
0
0
0
5
90 ns
90
90
90
35
30
30
30
40
0
0
0
5
tEHQX
tAXQX
AI05448
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns