AT28LV010-25TC Atmel, AT28LV010-25TC Datasheet - Page 3

IC EEPROM 1MBIT 250NS 32TSOP

AT28LV010-25TC

Manufacturer Part Number
AT28LV010-25TC
Description
IC EEPROM 1MBIT 250NS 32TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT28LV010-25TC

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
250ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT28LV01025TC

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Device Operation
READ: The AT28LV010 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state when either CE or OE is high. This dual-
line control gives designers flexibility in preventing bus con-
tention in their system.
WRITE: The write operation of the AT28LV010 allows 1 to
128 bytes of data to be written into the device during a sin-
gle internal programming period. Each write operation must
be preceded by the software data protection (SDP) com-
mand sequence. This sequence is a series of three unique
write command operations that enable the internal write cir-
cuitry. The command sequence and the data to be written
must conform to the software protected write cycle timing.
Addresses are latched on the falling edge of WE or CE,
whichever occurs last and data is latched on the rising
edge of WE or CE, whichever occurs first. Each successive
byte must be written within 150 s (t
byte. If the t
accepting data and commence the internal programming
operation. If more than one data byte is to be written during
a single programming operation, they must reside on the
same page as defined by the state of the A7 - A16 inputs.
For each WE high to low transition during the page write
operation, A7 - A16 must be the same.
The A0 to A6 inputs are used to specify which bytes within
the page are to be written. The bytes may be loaded in any
order and may be altered within the same load period. Only
bytes which are specified for writing will be written; unnec-
essary cycling of other bytes within the page does not
occur.
DATA POLLING: The AT28LV010 features DATA Polling
to indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will
result in the complement of the written data to be presented
on I/O7. Once the write cycle has been completed, true
BLC
limit is exceeded the AT28LV010 will cease
BLC
) of the previous
data is valid on all outputs, and the next write cycle may
begin. DATA Polling may begin at anytime during the write
cycle.
TOGGLE BIT: In addition to DATA Polling the AT28LV010
provides another method for determining the end of a write
cycle. During the write operation, successive attempts to
read data from the device will result in I/O6 toggling
between one and zero. Once the write has completed, I/O6
will stop toggling and valid data will be read. Reading the
toggle bit may begin at any time during the write cycle.
DATA PROTECTION: If precautions are not taken, inad-
vertent writes may occur during transitions of the host sys-
tem power supply. Atmel has incorporated both hardware
and software features that will protect the memory against
inadvertent writes.
HARDWARE PROTECTION: Hardware features protect
against inadvertent writes to the AT28LV010 in the follow-
ing ways: (a) V
2.0V (typical) the device will automatically time out 5 ms
(typical) before allowing a write; (b) write inhibit—holding
any one of OE low, CE high or WE high inhibits write
cycles; and (c) noise filter—pulses of less than 15 ns (typi-
cal) on the WE or CE inputs will not initiate a write cycle.
SOFTWARE DATA PROTECTION: The AT28LV010
incorporates the industry standard software data protection
(SDP) function. Unlike standard 5-volt only EEPROM’s, the
AT28LV010 has SDP enabled at all times. Therefore, all
write operations must be preceded by the SDP command
sequence.
The data in the 3-byte command sequence is not written to
the device; the addresses in the command sequence can
be utilized just like any other location in the device. Any
attempt to write to the device without the 3-byte sequence
will start the internal timers. No data will be written to the
device. However, for the duration of t
will effectively be polling operations.
CC
power-on delay—once V
WC
, read operations
CC
has reached
3

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