AT49BV001-12TC Atmel, AT49BV001-12TC Datasheet - Page 10

IC FLASH 1MBIT 120NS 32TSOP

AT49BV001-12TC

Manufacturer Part Number
AT49BV001-12TC
Description
IC FLASH 1MBIT 120NS 32TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT49BV001-12TC

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT49BV00112TC
Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
10
Symbol
t
t
t
t
t
t
t
t
BP
AS
AH
DS
DH
WP
WPH
EC
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV/LV001(N)(T)
(See note 4 under command definitions.)
Parameter
Byte Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
A0-A16
A0-A16
DATA
WE
OE
CE
(1)
t
AS
5555
t
BYTE 0
AH
AA
t
t
DS
WP
2AAA
t
BYTE 1
DH
55
5555
t
WPH
BYTE 2
80
5555
BYTE 3
AA
2AAA
Min
BYTE 4
70
70
90
90
0
0
55
Note 2
BYTE 5
Note 3
Typ
30
t
EC
Max
50
10
1110C–FLASH–9/03
seconds
Units
µs
ns
ns
ns
ns
ns
ns

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