AT45DB161-CI Atmel, AT45DB161-CI Datasheet - Page 2

• Manufacturer Part Number: AT45DB161-CI
• Description: IC FLASH 16MBIT 20MHZ 24CBGA
• Manufacturer: Atmel

Specifications of AT45DB161-CI

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 16M (4096 pages x 528 bytes)
• Speed: 20MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 24-CBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

while a page in the main memory is being reprogrammed.
Unlike conventional Flash memories that are accessed ran-
domly with multiple address lines and a parallel interface,
the DataFlash uses a serial interface to sequentially access
its data. The simple serial interface facilitates hardware lay-
out, increases system reliability, minimizes switching noise,
and reduces package size and active pin count. The device
is optimized for use in many commercial and industrial
applications where high density, low pin count, low voltage,
and low power are essential. Typical applications for the
DataFlash are digital voice storage, image storage, and
data storage. The device operates at clock frequencies up
Block Diagram
Memory Array
To provide optimal flexibility, the memory array of the
AT45DB161 is divided into three levels of granularity com-
prising of sectors, blocks, and pages. The Memory
Architecture Diagram illustrates the breakdown of each
2
RDY/BUSY
RESET
GND
SCK
VCC
WP
CS
AT45DB161
PAGE (528 BYTES)
BUFFER 1 (528 BYTES)
SI
FLASH MEMORY ARRAY
I/O INTERFACE
to 13 MHz with a typical active read current consumption of
4 mA.
To allow for simple in-system reprogrammability, the
AT45DB161 does not require high-input voltages for pro-
gramming. The device operates from a single power
supply, 2.7V to 3.6V, for both the program and read opera-
tions. The AT45DB161 is enabled through the chip select
pin (CS) and accessed via a three-wire interface consisting
of the Serial Input (SI), Serial Output (SO), and the Serial
Clock (SCK).
All programming cycles are self-timed, and no separate
erase cycle is required before programming.
level and details the number of pages per sector and block.
All program operations to the DataFlash occur on a page
by page basis; however, the optional erase operations can
be performed at the block or page level.
BUFFER 2 (528 BYTES)
SO