AT49BV1614-11CI Atmel, AT49BV1614-11CI Datasheet - Page 12

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AT49BV1614-11CI

Manufacturer Part Number
AT49BV1614-11CI
Description
IC FLASH 16MBIT 110NS 48CBGA
Manufacturer
Atmel
Datasheet

Specifications of AT49BV1614-11CI

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8 or 1M x 16)
Speed
110ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.3 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-CBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT49BV1614-11CI
Manufacturer:
VISHAY
Quantity:
2 028
Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
12
Symbol
t
t
t
t
t
t
t
t
t
BP
AS
AH
DS
DH
WP
WPH
EC
SEC
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
4. The t
(See note 3 under Command Definitions.)
Parameter
Byte/Word Programming Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Chip Erase Cycle Time
Sector Erase Cycle Time
WPH
A0-A19
DATA
time between the 5th and 6th bus cycle should be a minimum of 150 ns.
A0 -A19
WE
OE
CE
DATA
WE
OE
CE
(1)
AT49BV1604(T)/1614(T)
t
AS
t
AS
5555
WORD 0
t
5555
AH
AA
t
AH
AA
t
t
DS
WP
2AAA
t
DS
t
WP
WORD 1
t
2AAA
DH
55
t
DH
55
5555
t
WPH
WORD 2
5555
80
PROGRAM CYCLE
t
WPH
A0
5555
WORD 3
ADDRESS
AA
INPUT
DATA
2AAA
WORD 4
Min
100
100
100
10
50
0
55
(4)
(4)
t
BP
Note 2
WORD 5
Note 3
Typ
200
20
t
EC
5555
AA
Max
50
10
seconds
Units
ms
ns
ns
ns
ns
ns
ns
µs

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