MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet
MT45W8MW16BGX-708 WT TR
Specifications of MT45W8MW16BGX-708 WT TR
Related parts for MT45W8MW16BGX-708 WT TR
MT45W8MW16BGX-708 WT TR Summary of contents
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... DQ14 DQ13 A14 A15 DQ5 DQ6 G A13 DQ7 DQ15 A19 A12 WE# H A18 A8 A9 A10 A11 J WAIT CLK ADV# A22 RFU Top View (Ball Down) Designator Part Number Example: MT45W8MW16BGX-701LWT ©2003 Micron Technology, Inc. All rights reserved. 6 CRE A20 RFU None ...
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... Electrical Characteristics and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 Timing Diagrams .36 Data Sheet Designation: Production .63 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128MbTOC.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice MEG x 16 ©2003 Micron Technology, Inc. All rights reserved. ...
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... Figure 55: Asynchronous WRITE Followed by Asynchronous READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 Figure 56: 54-Ball VFBGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .63 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128MbLOF.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 TCR Micron Technology, Inc., reserves the right to change products or specifications without notice MEG x 16 ©2003 Micron Technology, Inc. All rights reserved. ...
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... Burst READ Timing Parameters .60 Table 51: Asynchronous WRITE Timing Parameters Using ADV .60 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128MbLOT.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice MEG x 16 ©2003 Micron Technology, Inc. All rights reserved. ...
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... Table 55: READ Timing Parameters—Async WRITE Followed by Async READ . . . . . . . . . . . . . . . . . . . . . . . . . . .62 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128MbLOT.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Micron Technology, Inc., reserves the right to change products or specifications without notice MEG x 16 ©2003 Micron Technology, Inc. All rights reserved. ...
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... CellularRAM™ products are high-speed, CMOS pseudo-static random access memories devel- oped for low-power, portable applications. The MT45W8MW16BGX device has a 128Mb DRAM core, organized as 8 Meg x 16 bits. These devices include an industry-standard burst mode Flash interface that dramatically increases read/write bandwidth com- pared with other low-power SRAM or Pseudo SRAM offerings ...
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... Output Enable: Enables the output buffers when LOW. When OE# is HIGH, the output buffers are disabled. Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is a WRITE to either a configuration register or to the memory array. Lower Byte Enable. DQ[7:0] Upper Byte Enable. DQ[15:8] Data Inputs/Outputs ...
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... Burst mode operation is initialized through the bus configuration register (BCR[15]). 9. Initial cycle. Following cycles are the same as BURST CONTINUE. CE# must stay LOW for the equivalent of a single-word burst (as indicated by WAIT). 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 1 ADV# CE# OE# ...
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... If the device required is not on this list, please contact the factory. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Figure 3: Part Number Chart B GX -70 8 Package Codes GX = "Green" VFBGA ( grid, 0.75mm pitch, 8.0mm x 10.0mm x 1.0mm) 54-ball ...
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... Functional Description In general, the MT45W8MW16BGX device is a high- density alternative to SRAM and Pseudo SRAM prod- ucts, popular in low-power, portable applications. MT45W8MW16BGX contains a 134,217,728-bit DRAM core, organized as 8,388,608 addresses by 16 bits. The device implements the same high-speed bus interface found on burst mode Flash products. ...
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... The WAIT output asserts as soon as CE# goes LOW, and de-asserts to indicate when data trans- ferred into (or out of ) the memory. WAIT will again be asserted if the burst crosses a row boundary (variable latency only—do not cross row boundaries when using fixed latency). Once the CellularRAM device has ...
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... Non-default BCR settings for burst mode WRITE (4-word burst): Fixed or variable latency; latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Latency Code 2 (3 clocks) D[0] Latency Code 2 (3 clocks) D[0] Micron Technology, Inc ...
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... CE# LOW time t must not exceed CEM. Mixed-mode operation facili- tates a seamless interface to legacy burst mode Flash memory controllers. See Figure 50 on page 57 for the “Asynchronous WRITE Followed by Burst READ” tim- ing diagram. WAIT Operation The WAIT output on a CellularRAM device is typi- cally connected to a shared, system-level WAIT signal (see Figure 10) ...
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... Non-default BCR settings for refresh collision during variable-latency READ operation: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY D[0] Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 ...
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... Partial Array Refresh Partial array refresh (PAR) restricts refresh opera- tion to a portion of the total memory array. This fea- ture enables the device to reduce standby current by refreshing only that part of the memory array required by the host system. The refresh options are full array, one-half array, one-quarter array, one-eighth array, or none of the array ...
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... CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—additional WAIT cycles caused by refresh collisions require a corresponding number of additional CE# LOW cycles. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Followed by READ ARRAY Operation OPCODE t AVH t AVS ...
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... VPH ADV# CE# OE# WE# LB#/UB# DQ[15:0] NOTE: A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Followed by READ ARRAY Operation t AVH t AVS AVH t AVS AAVD Initiate Register Access ...
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... A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR. 3. CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—additional WAIT cycles caused by refresh collisions require a corresponding number of additional CE# LOW cycles. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Latch Control Register Address ABA ...
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... CRE. If the software mecha- nism is used, CRE can simply be tied to V line often used for CRE control purposes is no longer required. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Figure 16: Load Configuration Register ADDRESS CE# OE# WE# ...
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... Bus Configuration Register The BCR defines how the CellularRAM device inter- acts with the system memory bus. Page mode opera- tion is enabled by a bit contained in the RCR. Figure 18 describes the control bits in the BCR. At power-up, the BCR is set to 9D1Fh. Figure 18: Bus Configuration Register Definition ...
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... The reduced-strength options are intended for stacked chip (Flash + Cellular- RAM) environments when there is a dedicated memory bus. The reduced-drive-strength option minimizes the noise generated on the data bus during READ opera- tions ...
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... The WAIT configuration bit is used to determine when WAIT transitions between the asserted and the de-asserted state with respect to valid data presented on the data bus. The memory controller will use the WAIT signal to coordinate data transfer during synchro- nous READ and WRITE operations. When BCR[ ...
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... WAIT must be monitored to detect delays caused by collisions with refresh operations. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Fixed initial access latency outputs the first data at a consistent time that allows for worst-case refresh colli- sions. The latency counter must be configured to match the initial latency and the clock frequency ...
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... VALID A[22:0] V ADDRESS ADV DQ[15: DQ[15: 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 1 LATENCY REFRESH NORMAL COLLISION 2 3 — — Code 2 VALID OUTPUT Code 3 (Default MEG x 16 MAX INPUT CLK FREQUENCY (MHz) -701 -708 4 66 (15ns) 54 (18 ...
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... V IH ADV CE DQ[15: (READ DQ[15: (WRITE) Burst Identified (ADV# = LOW) 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY LATENCY COUNT ( 104 (9.62ns) — from 1.8V–1.95V N-1 Cycles Cycle AADV ACLK VALID OUTPUT VALID INPUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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... The PAR bits restrict refresh operation to a portion of the total memory array. This feature allows the device to reduce standby current by refreshing only that part of the memory array required by the host sys- tem. The refresh options are full array, one-half array, one-quarter array, one-eighth array, or none of the array ...
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... BIT FIELD DIDR[15] Field Name Reserved Bit Setting 0b — Meaning 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY ACTIVE SECTION ADDRESS SPACE Full die 000000h–7FFFFFh One-half of die 000000h–3FFFFFh One-quarter of die 000000h–1FFFFFh One-eighth of die 000000h–0FFFFFh ...
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... Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY –0.50V to (4.0V or VccQ + 0.3V, whichever is less) tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability ...
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... I (MAX) values measured with PAR set to FULL ARRAY and at +85°C. In order to achieve low standby current, all inputs SB must be driven to either standby mode. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY CONDITIONS SYMBOL 1. ...
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... Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY CONDITIONS SYMBOL = 0V, I Standard Power CC PAR CE (no desig.) CC Low-Power Option (L) might be slightly higher for up to 500ms after changes to the PAR array parti- PAR 10 ...
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... Input timing begins Output timing ends at V Q/2. CC NOTE: All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b). 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY CONDITIONS 0V 1.95V; +85°C ...
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... High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 31. The Low-Z timings measure a 100mV transition away from the High Page mode enabled only. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY SYMBOL MIN t AA ...
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... High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 31. The Low-Z timings measure a 100mV transition away from the High-Z (V 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY -701 SYMBOL MIN MAX ...
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... High-Z to Low-Z timings are tested with the circuit shown in Figure 27 on page 31. The Low-Z timings measure a 100mV transition away from the High WE# LOW time must be limited to 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY SYMBOL MIN t AS ...
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... CE# HIGH CE# HIGH for longer than 15ns. 3. Low-Z to High-Z timings are tested with the circuit shown in Figure 27 on page 31. The High-Z timings measure a 100mV transition from either 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY -701 SYMBOL MIN MAX ...
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... Table 19: Initialization and DPD Timing Parameters PARAMETER Initialization Period (required before normal operations) Time from DPD entry to DPD exit CE# LOW time to exit DPD 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Figure 28: Initialization Period DPD t DPDX DPD Exit ...
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... A[22:0] ADV# CE# LB#/UB# OE# WE# DQ[15:0] WAIT Table 20: Asynchronous READ Timing Parameters -701/708 SYMBOL MIN MAX MIN BHZ t 10 BLZ 1 7.5 t CEW 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Figure 30: Asynchronous READ VALID ADDRESS OLZ BLZ t LZ ...
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... Table 21: Asynchronous READ Timing Parameters Using ADV# -701/708 SYMBOL MIN MAX MIN AADV 2 t AVH 5 t AVS BHZ 10 t BLZ t 1 7.5 CEW 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY V IH VALID ADDRESS VPH t AVS t AVH AADV CVS OLZ V ...
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... Table 22: Asynchronous READ Timing Parameters—Page Mode Operation -701/708 SYMBOL MIN MAX MIN APA BHZ t 10 BLZ t 4 CEM t 1 7.5 CEW 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Figure 32: Page Mode READ VALID ADDRESS VALID VALID ADDRESS V ADDRESS CEM ...
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... MIN MAX MIN MAX MIN MAX ABA ACLK BOE CEM t 1 7.5 1 7.5 CEW t 9.62 12.5 CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t t CLK KP t KHKL VALID ADDRESS CEM t t CSP ABA t BOE t OLZ CEW High-Z t ...
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... ACLK BOE CBPH CEM 1 7.5 1 7.5 t CEW 9.62 12.5 t CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t KHKL t CLK t CEM t ABA t BOE t OLZ t KHTL t ACLK VALID High-Z OUTPUT -856 UNITS SYMBOL KHKL KHTL KOH 4 µs ...
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... MIN MAX MIN MAX MIN MAX AADV ACLK AVH BOE CEM 1 7.5 1 7.5 t CEW 9.62 12.5 t CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t t CLK KP t AVH AADV t CEM High-Z -856 UNITS SYMBOL KHKL KHTL KOH 4 µs ...
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... ACLK AVH BOE CBPH CEM t 1 7.5 1 7.5 CEW 9.62 12.5 t CLK 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t KHKL t CLK AADV t CEM BOE t OLZ t KHTL t ACLK VALID High-Z OUTPUT -856 UNITS SYMBOL CSP KHKL 20 ns ...
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... ACLK BOE CBPH CEM 9.62 12.5 t CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Figure 37: READ Burst Suspend t CLK t CEM t OHZ t BOE t KOH VALID VALID VALID VALID OUTPUT OUTPUT OUTPUT OUTPUT -856 UNITS SYMBOL 11 ns ...
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... Table 28: Burst READ Timing Parameters—BCR[ -701 -708 SYMBOL MIN MAX MIN MAX MIN MAX ACLK t 9.62 12.5 CLK 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY NOTE 2 t KHTL NOTE 3 VALID OUTPUT End of Row t CEM. -856 UNITS SYMBOL ...
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... A[22:0] ADV# CE# LB#/UB# OE# WE# DQ[15:0] IN DQ[15:0] OUT WAIT Table 29: Asynchronous WRITE Timing Parameters—CE#-Controlled -701/708 SYMBOL MIN MAX MIN 7.5 t CEW 5 t CPH 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY VALID ADDRESS WPH High WHZ ...
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... Figure 40: LB#/UB#-Controlled Asynchronous WRITE A[22:0] ADV# CE# LB#/UB# OE# WE# DQ[15:0] IN DQ[15:0] OUT WAIT Table 30: Asynchronous WRITE Timing Parameters—LB#/UB#-Controlled -701/708 SYMBOL MIN MAX MIN 7.5 t CEW 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY VALID ADDRESS WPH High WHZ ...
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... Figure 41: WE#-Controlled Asynchronous WRITE A[22:0] ADV# CE# LB#/UB# OE# WE# DQ[15:0] IN DQ[15:0] OUT WAIT Table 31: Asynchronous WRITE Timing Parameters—WE#-Controlled -701/708 SYMBOL MIN MAX MIN 7.5 CEW 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY VALID ADDRESS WPH High WHZ CEW ...
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... WE# DQ[15:0] IN DQ[15:0] OUT WAIT Table 32: Asynchronous WRITE Timing Parameters Using ADV# -701/708 SYMBOL MIN MAX MIN AVH 5 t AVS 7.5 t CEW 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY V IH VALID ADDRESS AVH t AVS VPH High WHZ ...
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... MIN MAX MIN MAX MIN MAX CBPH CEM t 1 7.5 1 7.5 CEW 9.62 12.5 t CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t CLK CEM t KHTL NOTE D[1] D[2] -856 UNITS SYMBOL KADV 4 µs t KHKL 1 7 KHTL 15 ns ...
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... MIN MAX MIN MAX MIN MAX AVH CBPH CEM 1 7.5 1 7.5 t CEW 9.62 12.5 t CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t CLK AVH CEM t KHTL NOTE D[1] -856 UNITS SYMBOL KADV 4 µs t KHKL 1 7.5 ns ...
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... SYMBOL MIN MAX MIN MAX MIN MAX 9.62 12.5 t CLK 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY NOTE 2 t KHTL NOTE 3 VALID INPUT START OF ROW (A[6:0] = 00h) (NOTE 4) t CEM. -856 UNITS SYMBOL 15 ns ...
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... Table 37: READ Timing Parameters—Burst WRITE Followed by Burst READ -701 -708 SYMBOL MIN MAX MIN MAX MIN MAX ACLK BOE t 9.62 12.5 CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY VALID ADDRESS t KADV CBPH t HD NOTE 2 t CSP D[0] D[1] D[2] D[ CEM ...
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... SYMBOL MIN MAX MIN MAX MIN MAX t CLK 9. CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t CLK READ Burst interrupted with new READ or WRITE. See Note VALID ADDRESS CEM ( ) Note KHTL t BOE t BOE NOTE 4 ...
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... MIN MAX MIN MAX MIN MAX ACLK BOE t 9.62 12.5 CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Variable Latency Mode WRITE Burst interrupted with new WRITE or READ. See Note 2. t CLK VALID VALID ADDRESS VALID ADDRESS t KHTL ...
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... MIN MAX MIN MAX MIN MAX ACLK BOE t 9.62 12.5 CLK CSP 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY WRITE Burst interrupted with new WRITE or READ. See Note 2. t CLK t SP VALID ADDRESS t AVH t AVH KADV CEM ( VALID ADDRESS t KHTL ...
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... SYMBOL MIN MAX MIN MAX ACLK BOE CBPH t 1 7.5 1 7.5 CEW 9.62 12.5 t CLK 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t CLK VALID ADDRESS CBPH t CSP NOTE CEW t ACLK V OH High -856 MAX UNITS SYMBOL ...
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... MIN MAX MIN MAX MIN MAX ACLK BOE CBPH t 1 7.5 1 7.5 CEW t 9.62 12.5 CLK 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t CLK VALID ADDRESS CBPH t CSP NOTE CEW V OH DATA High -856 MAX UNITS ...
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... CSP Table 49: Asynchronous WRITE Timing Parameters—WE# Controlled -701/-708 SYMBOL MIN MAX 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t CLK BOE OHZ t OLZ KHTL t KOH t ACLK VALID OUTPUT -856 MIN MAX UNITS SYMBOL 11 ns ...
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... Table 51: Asynchronous WRITE Timing Parameters Using ADV# -701/-708 SYMBOL MIN MAX MIN AVH 5 t AVS 7.5 t CEW 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY t CLK t VPH BOE OHZ t OLZ KHTL t t ACLK KOH VALID OUTPUT -856 MIN MAX UNITS SYMBOL ...
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... Table 53: READ Timing Parameters—ADV# LOW -701/-708 SYMBOL MIN MAX MIN BHZ 10 t BLZ 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY VALID ADDRESS CPH NOTE High-Z DATA CPH is only required after CE#-controlled WRITEs. -856 MAX UNITS SYMBOL 0 ns ...
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... DH Table 55: READ Timing Parameters—Async WRITE Followed by Async READ -701/-708 SYMBOL MIN MAX BHZ t 10 BLZ 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY VALID ADDRESS t AVH CPH NOTE WPH V OH DATA DATA CPH is only required after CE#-controlled WRITEs. ...
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... CellularRAM is a trademark of Micron Technology, Inc., inside the U.S. and a trademark of Infineon Technologies outside the U.S. All other trademarks are the property of their respective owners. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY Figure 56: 54-Ball VFBGA 3.75 0.75 TYP BALL A1 ID 5.00 ± ...
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... Rev. A, Preliminary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9/04 • Initial release. 09005aef80ec6f79 pdf/09005aef80ec6f65 zip Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY • Deleted 4-word burst READ operation with LB#/ UB# timing diagram and parameters table. • Clarified end-of-row and start-of-row addressing and vendor-based differences in CellularRAM device operation— ...