MT47H16M16BG-37E:B TR Micron Technology Inc, MT47H16M16BG-37E:B TR Datasheet - Page 100

• Manufacturer Part Number: MT47H16M16BG-37E:B TR
• Description: IC DDR2 SDRAM 256MBIT 84FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H16M16BG-37E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 3.75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1045-1; MT47H16M16BG-37E:B

Figure 56: Write Burst
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
Address
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL ± t DQSS
WL - t DQSS
WL + t DQSS
NOP
T1
100
DI
b
NOP
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
b
DI
b
256Mb: x4, x8, x16 DDR2 SDRAM
Transitioning Data
T2n
t DQSS 5
NOP
T3
5
t DQSS 5
T3n
©2003 Micron Technology, Inc. All rights reserved.
t
NOP
DQSS.
T4
Don’t Care
WRITE