CY7C1049B-20VC Cypress Semiconductor Corp, CY7C1049B-20VC Datasheet - Page 3

IC SRAM 4MBIT 20NS 36SOJ

CY7C1049B-20VC

Manufacturer Part Number
CY7C1049B-20VC
Description
IC SRAM 4MBIT 20NS 36SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1049B-20VC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
36-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1027
Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Document #: 38-05169 Rev. *A
OUTPUT
C
C
Note:
V
V
V
V
I
I
I
I
I
3.
IX
OZ
CC
SB1
SB2
Equivalent to:
IN
OUT
OH
OL
IH
IL
Parameter
INCLUDING
JIG AND
SCOPE
Tested initially and after any design or process changes that may affect these parameters.
5V
Parameter
OUTPUT
30 pF
[3]
(a)
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
V
Supply Current
Automatic CE
Power-Down Current
—TTL Inputs
Automatic CE
Power-Down Current
—CMOS Inputs
THÉ
CC
R1 481
Operating
VENIN EQUIVALENT
Description
Input Capacitance
I/O Capacitance
167
255
R2
Description
Over the Operating Range (continued)
OUTPUT
[2]
1.73V
INCLUDING
JIG AND
SCOPE
5V
V
V
GND < V
GND < V
Output Disabled
V
f = f
Max. V
V
V
Max. V
CE > V
V
or V
CC
CC
CC
IN
IN
IN
MAX
> V
< V
> V
IN
= Min., I
= Min., I
= Max.
5 pF
< 0.3V, f = 0
CC
CC
CC
IH
IL
CC
= 1/t
, f = f
Test Conditions
I
OUT
, CE > V
,
or
(b)
< V
– 0.3V,
– 0.3V,
,
R1 481
OH
OL
RC
< V
T
V
CC
MAX
A
CC
= 8.0 mA
= –4.0 mA
= 25 C, f = 1 MHz,
CC
= 5.0V
IH
,
Test Conditions
Com’l
Com’l
Ind’l
Ind’l
255
R2
GND
L
L
3.0V
3 ns
Min.
–0.3
2.4
2.2
–1
–1
7C1049B-20
V
CC
Max.
185
0.4
0.8
0.5
0.5
10%
+1
+1
40
8
8
+ 0.3
90%
ALL INPUT PULSES
Max.
8
8
Min.
–0.3
2.4
2.2
–1
–1
7C1049B-25
CY7C1049B
V
CC
Max.
180
0.4
0.8
0.5
0.5
+1
+1
40
8
8
+ 0.3
Page 3 of 10
Unit
pF
pF
90%
10%
Unit
mA
mA
mA
mA
mA
mA
V
V
V
V
A
A
3 ns

Related parts for CY7C1049B-20VC