CY7C1021CV33-10VC Cypress Semiconductor Corp, CY7C1021CV33-10VC Datasheet - Page 4
![IC SRAM 1MBIT 10NS 44SOJ](/photos/7/23/72391/428-44-soj_sml.jpg)
CY7C1021CV33-10VC
Manufacturer Part Number
CY7C1021CV33-10VC
Description
IC SRAM 1MBIT 10NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1021CV33-10VC.pdf
(12 pages)
Specifications of CY7C1021CV33-10VC
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1478
Document #: 38-05132 Rev. *C
AC Test Loads and Waveforms
Note:
4.
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
AC characteristics (except High-Z) for all 8-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin
load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
8-ns devices:
GND
3.0V
Rise Time: 1 V/ns
OUTPUT
10%
90%
Z = 50
ALL INPUT PULSES
(a)
(c)
1.5V
50
[4]
Fall Time: 1 V/ns
90%
30 pF*
10%
10-, 12-, 15-ns devices:
High-Z characteristics:
OUTPUT
OUTPUT
3.3V
3.3V
30 pF
5 pF
(d)
(b)
R 317
R 317
CY7C1021CV33
351
351
R2
R2
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