CY7C1021CV33-10VXC Cypress Semiconductor Corp, CY7C1021CV33-10VXC Datasheet - Page 7

IC SRAM 1MBIT 10NS 44SOJ

CY7C1021CV33-10VXC

Manufacturer Part Number
CY7C1021CV33-10VXC
Description
IC SRAM 1MBIT 10NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1021CV33-10VXC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
428-1863
CY7C1021CV3310VXC
CY7C1021CV3310VXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1021CV33-10VXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Switching Waveforms
Notes
Document Number: 38-05132 Rev. *I
11. Device is continuously selected. OE, CE, BHE, and/or BLE = V
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
DATA OUT
ADDRESS
CURRENT
DATA OUT
BHE, BLE
ADDRESS
SUPPLY
V
OE
CE
CC
PREVIOUS DATA VALID
HIGH IMPEDANCE
Figure 4. Read Cycle No. 1 (Address Transition Controlled)
t
t
LZCE
PU
t
ACE
Figure 5. Read Cycle No. 2 (OE Controlled)
t
t
LZBE
t
DBE
LZOE
t
DOE
t
OHA
50%
t
AA
IL
.
t
RC
t
RC
RC
DATA VALID
[12, 13]
[11, 12]
DATA VALID
t
HZOE
t
t
HZCE
HZBE
CY7C1021CV33
t
PD
50%
IMPEDANCE
HIGH
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