CY7C1021CV33-15ZXC Cypress Semiconductor Corp, CY7C1021CV33-15ZXC Datasheet - Page 5

• Manufacturer Part Number: CY7C1021CV33-15ZXC
• Description: IC SRAM 1MBIT 15NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1021CV33-15ZXC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-1733; CY7C1021CV3315ZXC; CY7C1021CV3315ZXC

Capacitance
Tested initially and after any design or process changes that may affect these parameters
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
Note
Document Number: 38-05132 Rev. *I
C
C
4. AC characteristics (except High-Z) for all 8-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the Thevenin load shown
Parameter
Parameter
IN
OUT
in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
Θ
Θ
JC
JA
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
8-ns devices:
GND
3.0V
Rise Time: 1 V/ns
OUTPUT
Description
Description
10%
90%
Z = 50Ω
ALL INPUT PULSES
Figure 3. AC Test Loads and Waveforms
T
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51
A
(a)
(c)
= 25°C, f = 1 MHz, V
1.5V
50 Ω
Test Conditions
Fall Time: 1 V/ns
90%
30 pF*
10%
Test Conditions
CC
= 3.3V
10-, 12-, 15-ns devices:
High-Z characteristics:
OUTPUT
OUTPUT
[4]
65.06
34.21
SOJ
.
3.3V
3.3V
30 pF*
5 pF
TSOP II
76.92
15.86
(d)
(b)
CY7C1021CV33
R 317Ω
R 317Ω
Max
8
8
351Ω
351Ω
FBGA
R2
95.32
10.68
R2
Page 5 of 14
Unit
pF
pF
°C/W
°C/W
Unit
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