CY7C1021BN-12VXC Cypress Semiconductor Corp, CY7C1021BN-12VXC Datasheet - Page 2

IC SRAM 1MBIT 12NS 44SOJ

CY7C1021BN-12VXC

Manufacturer Part Number
CY7C1021BN-12VXC
Description
IC SRAM 1MBIT 12NS 44SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1021BN-12VXC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (64K x 16)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document #: 001-06494 Rev. *A
Selection Guide
Pin Definitions
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA) Com’l / Ind’l
Pin Name
I/O
BHE, BLE
A
0
1
V
V
WE
NC
CE
OE
–A
–I/O
CC
SS
15
16
1–5,18–21, 24–27, 42–44
SOJ, TSOP–Pin Number
7–10, 13–16, 29–32,
22, 23, 28
35–38
40, 39
12, 34
11, 33
17
41
6
Com’l / Ind’l
Automotive-A
Automotive-E
Com’l / Ind’l (L version)
Automotive-A (L version)
Automotive-E
Power Supply Power Supply inputs to the device.
Input/Control Write Enable Input, active LOW. When selected LOW, a Write is
Input/Control Chip Enable Input, active LOW. When LOW, selects the chip. When
Input/Control Byte Write Select Inputs, active LOW. BHE controls I/O
Input/Control Output Enable, active LOW. Controls the direction of the I/O pins.
Input/Output Bidirectional Data I/O lines. Used as input or output lines depending
No Connect No Connects. Not connected to the die.
I/O Type
Ground
Input
Address Inputs used to select one of the address locations.
on operation.
conducted. When deselected HIGH, a Read is conducted.
HIGH, deselects the chip.
BLE controls I/O
When LOW, the I/O pins are allowed to behave as outputs. When
deasserted HIGH, I/O pins are tri-stated, and act as input data pins.
Ground for the device. Should be connected to ground of the
system.
7C10211B-10
8
–I/O
150
0.5
10
10
1
, .
Description
7C1021B-12
140
0.5
12
10
CY7C10211BN
CY7C1021BN
7C1021B-15
Page 2 of 10
130
130
130
0.5
0.5
15
10
15
16
–I/O
9
,
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