M25P40-VMN6 NUMONYX, M25P40-VMN6 Datasheet - Page 49

• Manufacturer Part Number: M25P40-VMN6
• Description: IC FLASH 4MBIT 50MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P40-VMN6

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M25P40
13
Revision history
Table 24.
25-May-2001
11-Sep-2001
12-Sep-2002
13-Dec-2002
24-Nov-2003
12-Mar-2004
05-Aug-2004
01-Aug-2005
16-Jan-2002
12-Jun-2003
03-Jan-2005
12-Apr-2001
Date
Document Revision History
Revision
1.0
1.1
1.2
1.3
1.4
1.5
1.6
2.0
3.0
4.0
5.0
6.0
Serial Paged Flash Memory renamed as Serial Flash Memory
Document written
Changes to text: Signal Description/Chip Select; Hold Condition/1st para;
Protection modes; Release from Power-down and Read Electronic
Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their
contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/V
FAST_READ instruction added. Document revised with new timings, V
I
Programming, Release for Deep Power-down made more precise. Value
of t
Clarification of descriptions of entering Standby Power mode from Deep
Power-down mode, and of terminating an instruction sequence or data-
out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary
Data.
Typical Page Program time improved. Deep Power-down current
changed. Write Protect setup and hold times specified, for applications
that switch Write Protect to exit the Hardware Protection mode
immediately before a WRSR, and to enter the Hardware Protection mode
again immediately after.
Document promoted from Preliminary Data to full Datasheet
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
40MHz AC Characteristics table included as well as 25MHz. I
t
package
Automotive range added. Soldering temperature information clarified for
RoHS compliant devices
Device Grade information clarified. Data-retention measurement
temperature corrected. Details of how to find the date of marking added.
Small text changes. Notes 2 and 3 removed from
Information
End timing line of t
Updated Page Program (PP) instructions in
Program
(Device Grade
CC3
SE
W
(typ) and t
and clock slew rate. Descriptions of Polling, Hold Condition, Page
(max) modified.
(PP),
Scheme.
BE
Instruction Times (Device Grade 6)
3).
(typ) values improved. Change of naming for VDFPN8
SHQZ
modified in
Changes
Figure 25: Output
IO
; DC Characteristics/V
Page
Table 23: Ordering
Programming,
and
Timing.
Revision history
Instruction Times
CC3
IL
Page
(max),
49/51
WI
,