M29W400DB70N6 NUMONYX, M29W400DB70N6 Datasheet - Page 30

• Manufacturer Part Number: M29W400DB70N6
• Description: IC FLASH 4MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W400DB70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8 or 256K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and AC parameters
30/48
Table 10.
1. Sampled only, not 100% tested.
Table 11.
1. Sampled only, not 100% tested.
Figure 11. Read mode AC waveforms
A0-A17/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
Symbol
BYTE
I
CC3
V
Symbol
I
I
V
V
V
V
I
CC1
CC2
V
I
I
LKO
C
LO
OH
ID
OL
LI
IH
ID
IL
C
OUT
(1)
IN
Input Leakage current
Output Leakage current
Supply current (Read)
Supply current (Standby)
Supply current
(Program/Erase)
Input Low voltage
Input High voltage
Output Low voltage
Output High voltage
Identification voltage
Identification current
Program/Erase Lockout supply
voltage
Device capacitance
DC characteristics
Input capacitance
Output capacitance
tELBL/tELBH
Parameter
Parameter
tBHQV
tAVQV
tELQX
(1)
tELQV
tGLQX
tGLQV
Test Condition
V
tAVAV
VALID
V
OUT
0 V ≤ V
RP = V
IN
E = V
E = V
0 V ≤ V
controller active
Test condition
Program/Erase
I
OH
I
= 0 V
OL
= 0 V
f = 6 MHz
A9 = V
= –100
IL
CC
= 1.8 mA
OUT
CC
, G = V
IN
± 0.2 V,
± 0.2 V
≤ V
ID
≤ V
tBLQZ
µ
CC
A
IH
CC
,
VALID
Min
M29W400DT, M29W400DB
V
0.7V
tGHQX
tGHQZ
CC
–0.5
11.5
Min
1.8
– 0.4
CC
Max
tEHQZ
12
6
V
CC
Max
0.45
12.5
100
100
0.8
2.3
±1
±1
10
20
+ 0.3
tEHQX
tAXQX
Unit
AI02907
pF
pF
Unit
mA
mA
µ
µ
µ
µ
V
V
V
V
V
V
A
A
A
A