M93C56-RDS6TG STMicroelectronics, M93C56-RDS6TG Datasheet - Page 9

IC EEPROM 2KBIT 1MHZ 8TSSOP

M93C56-RDS6TG

Manufacturer Part Number
M93C56-RDS6TG
Description
IC EEPROM 2KBIT 1MHZ 8TSSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M93C56-RDS6TG

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
2K (256 x 8 or 128 x 16)
Speed
1MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 6. ERASE, ERAL Sequences
Note: For the meanings of An and Xn, please see Table 4, Table 5 and Table 6.
Erase
The Erase Byte or Word (ERASE) instruction sets
the bits of the addressed memory byte (or word) to
1. Once the address has been correctly decoded,
the falling edge of the Chip Select Input (S) starts
the self-timed Erase cycle. The completion of the
cycle can be detected by monitoring the Ready/
Busy line, as described on page 9.
Write
For the Write Data to Memory (WRITE) instruction,
8 or 16 data bits follow the op-code and address
bits. These form the byte or word that is to be writ-
ten. As with the other bits, Serial Data Input (D) is
sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled, the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C). If Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
be started, and the addressed location will not be
ERASE
ERASE
ALL
S
Q
S
Q
D
D
M93C86, M93C76, M93C66, M93C56, M93C46, M93C06
1 1
1
CODE
CODE
OP
OP
0
1
0
1
An
0
ADDR
ADDR
Xn X0
A0
programmed. The completion of the cycle can be
detected by monitoring the Ready/Busy line, as
described later in this document.
Once the Write cycle has been started, it is inter-
nally self-timed (the external clock signal on Serial
Clock (C) may be stopped or left running after the
start of a Write cycle). The cycle is automatically
preceded by an Erase cycle, so it is unnecessary
to execute an explicit erase instruction before a
Write Data to Memory (WRITE) instruction.
Erase All
The Erase All Memory (ERAL) instruction erases
the whole memory (all memory bits are set to 1).
The format of the instruction requires that a dum-
my address be provided. The Erase cycle is con-
ducted in the same way as the Erase instruction
(ERASE). The completion of the cycle can be de-
tected by monitoring the Ready/Busy line, as de-
scribed on page 9.
BUSY
BUSY
STATUS
STATUS
CHECK
CHECK
READY
READY
AI00879B
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