MAX5932ESA+ Maxim Integrated Products, MAX5932ESA+ Datasheet - Page 12

IC HOT SWAP CONTROL 8-SOIC

MAX5932ESA+

Manufacturer Part Number
MAX5932ESA+
Description
IC HOT SWAP CONTROL 8-SOIC
Manufacturer
Maxim Integrated Products
Type
Hot-Swap Controllerr
Datasheet

Specifications of MAX5932ESA+

Applications
General Purpose
Internal Switch(s)
No
Voltage - Supply
9 V ~ 80 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Product
Controllers & Switches
Supply Voltage (max)
80 V
Supply Voltage (min)
9 V
Power Dissipation
470 mW
Operating Temperature Range
- 40 C to + 85 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Positive High-Voltage, Hot-Swap Controller
Figure
Figure
10. Overvoltage Detection
11. Overvoltage Waveforms
SHORT
GND
V
PIN
IN
OVERVOLTAGE WAVEFORMS
49.9kΩ
3.4kΩ
1%
1%
R1
R2
10µs/div
1N5256B
0.68µF
30V
D1
C2
0.1µF
1
5
IN
50V/div
I
5A/div
GATE
50V/div
TIMER
10V/div
OUTPUT
50V/div
SENSE
ON
TIMER
V
CC
8
0.025Ω
R
SENSE
MAX5932
GND
SENSE
4
7
10Ω
A curve of Gate Drive vs. V
GATE is clamped to a maximum voltage of 18V above the
input voltage. At a minimum input-supply voltage of 9V,
the minimum gate-drive voltage is 4.5V. When the input-
supply voltage is higher than 20V, the gate-drive voltage
is at least 10V and a standard n-channel MOSFET can be
used. In applications over a 9V to 20V range, a logic-level
n-FET must be used with a proper protection Zener diode
between its gate and source (as D1 shown in
If the MAX5932 die temperature reaches +150°C, an
overtemperature fault is generated. As a result, GATE
goes low and turns the external MOSFET off. The
MAX5932 die temperature must cool down below +130°C
before the overtemperature fault condition is removed.
5%
R5
IRF530
GATE
Q1
6
PWRGD
FB
2
3
D2
CMPZ5248B
1kΩ
5%
R6
10nF
C1
R3
59kΩ
1%
R4
3.57kΩ
1%
CC
Thermal Shutdown
R7
24kΩ
5%
is shown in
C
L
GATE Voltage
PWRGD
Figure
Figure
5).
13.

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