L6384D013TR STMicroelectronics, L6384D013TR Datasheet - Page 5

• Manufacturer Part Number: L6384D013TR
• Description: IC DRIVER HALF BRIDGE HV 8SOIC
• Manufacturer: STMicroelectronics
• Type: Driverr

Specifications of L6384D013TR

• Configuration: Half Bridge
• Input Type: Inverting
• Current - Peak: 400mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 8 V ~ 16.6 V
• Operating Temperature: -45°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 70 ns
• Fall Time: 30 ns
• Supply Voltage (min): 8 V
• Supply Current: 25 mA
• Maximum Power Dissipation: 750 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 45 C
• Number Of Drivers: 2
• For Use With: 497-5492 - EVAL BOARD FOR L6384/L6385/L6386
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Delay Time: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4014-2

Figure 2. Typical Rise and Fall Times vs.
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6384 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shown in fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selection and charging:
To choose the proper C
MOS can be seen as an equivalent capacitor.
This capacitor C
gate charge :
The ratio between the capacitors C
is proportional to the cyclical voltage loss .
It has to be:
e.g.: if Q
3nF. With
300mV.
If HVG has to be supplied for a long time, the
C
leakage losses.
e.g.: HVG steady state consumption is lower than
200 A, so if HVG T
supply 1 C to C
(nsec)
time
250
200
150
100
BOOT
50
0
For both high and low side buffers @25˚C Tamb
0
selection has to take into account also the
gate
Load Capacitance
C
1
BOOT
is 30nC and V
C
EXT
EXT
BOOT
C
2
= 100nF the drop would be
EXT
. This charge on a 1 F ca-
is related to the MOS total
ON
>>>C
BOOT
is 5ms, C
Q
V
3
gate
gate
EXT
gate
value the external
4
is 10V, C
Tr
Tf
EXT
BOOT
and C
5
D99IN1015
has to
C (nF)
EXT
BOOT
is
pacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advan-
tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V
GND (or lower) and in the meanwhile the LVG is
on. The charging time (T
Ohm). At low frequency this drop can be ne-
glected. Anyway
must be taken in to account.
The following equation is useful to compute the
drop on the bootstrap DMOS:
drop on C
or the circuit topology doesn’t allow a sufficient
charging time, an external diode can be used.
Figure 3. Quiescent Current vs. Supply
the time in which both conditions are fulfilled and
it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop
due to
where Q
power MOS, R
bootstrap DMOS, and T
of the bootstrap capacitor.
For example: using a power MOS with a total
gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the T
V
( A)
10
10
10
10
Iq
drop
4
3
2
V
0
has to be taken into account when the voltage
drop
gate
the DMOS R
BOOT
2
Voltage
V
I
charge
drop
is the gate charge of the external
is calculated: if this drop is too high,
4
dson
R
30nC
dson
5 s
increasing the frequency
6
is the on resistance of the
DSON
charge
8
charge
125 ~ 0.8V
V
charge
drop
10
(typical value: 125
is the charging time
) of the C
T
is 5 s. In fact:
OUT
Q
12
charge
gate
is close to
14
R
D99IN1016
dson
BOOT
L6384
V
S
5/10
(V)
is
it