MC33151VDR2G ON Semiconductor, MC33151VDR2G Datasheet - Page 5

no-image

MC33151VDR2G

Manufacturer Part Number
MC33151VDR2G
Description
IC MOSFET DRIVER DUAL HS 8-SOIC
Manufacturer
ON Semiconductor
Type
High Speedr
Datasheet

Specifications of MC33151VDR2G

Configuration
Low-Side
Input Type
Inverting
Delay Time
35ns
Current - Peak
1.5A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
6.5 V ~ 18 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Rise Time
31 ns
Fall Time
32 ns
Supply Voltage (min)
6.5 V
Supply Current
10.5 mA
Maximum Power Dissipation
560 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MC33151VDR2G
MC33151VDR2GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC33151VDR2G
Manufacturer:
TI
Quantity:
1 200
Part Number:
MC33151VDR2G
Manufacturer:
ON/安森美
Quantity:
20 000
90%
10%
90%
10%
-1.0
-2.0
-3.0
3.0
2.0
1.0
0
0
0
Figure 10. Drive Output Saturation Voltage
0.2
Figure 12. Drive Output Rise Time
Figure 8. Propagation Delay
I
0.4
O
, OUTPUT LOAD CURRENT (A)
versus Load Current
V
CC
Logic Input
Sink Saturation
10 ns/DIV
50 ns/DIV
(Load to V
Drive Output
0.6
Source Saturation
(Load to Ground)
CC
0.8
)
V
V
C
T
A
CC
in
L
= 25°C
GND
= 1.0 nF
= 5 V to 0 V
1.0
= 12 V
V
V
C
T
V
80 ms Pulsed Load
120 Hz Rate
T
A
in
A
CC
L
CC
= 1.0 nF
= 25°C
= 25°C
= 5 V to 0 V
= 12 V
= 12 V
1.2
http://onsemi.com
1.4
5
90%
10%
-0.5
-0.7
-0.9
-1.1
-1.0
1.9
1.7
1.5
1.0
0.8
0.6
3.0
2.0
1.0
0
0
0
0
-55
0
(Drive Output Driven Above V
Source Saturation
(Load to Ground)
Figure 11. Drive Output Saturation Voltage
Sink Saturation
(Load to V
Figure 9. Drive Output Clamp Voltage
0.2
High State Clamp
-25
Figure 13. Drive Output Fall Time
CC
T
)
I
A
O
0.4
versus Clamp Current
, AMBIENT TEMPERATURE (°C)
, OUTPUT LOAD CURRENT (A)
versus Temperature
V
GND
0
CC
V
CC
I
sink
I
sink
GND
0.6
10 ns/DIV
25
CC
= 400 mA
= 10 mA
)
(Drive Output Driven Below Ground)
I
I
source
source
0.8
50
= 400 mA
= 10 mA
Low State Clamp
V
V
C
T
A
CC
in
L
= 1.0 nF
= 25°C
= 5 V to 0 V
1.0
= 12 V
V
80 ms Pulsed Load
120 Hz Rate
T
75
A
CC
= 25°C
= 12 V
V
CC
1.2
100
= 12 V
125
1.4

Related parts for MC33151VDR2G