VNQ5160K-E STMicroelectronics, VNQ5160K-E Datasheet - Page 19

IC DRIVER HISIDE QUAD POWERSSO24

VNQ5160K-E

Manufacturer Part Number
VNQ5160K-E
Description
IC DRIVER HISIDE QUAD POWERSSO24
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ5160K-E

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
160 mOhm
Current - Peak Output
5.4A
Voltage - Supply
4.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSSO-24
Switch Type
High Side
Power Switch Family
VNQ5160K-E
Power Switch On Resistance
160mOhm
Output Current
5A
Mounting
Surface Mount
Supply Current
2uA
Package Type
PowerSSO EP
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
24
Device Type
High Side
Module Configuration
High Side
Peak Output Current
5.4A
Output Resistance
0.16ohm
Input Delay
15µs
Output Delay
15µs
Supply Voltage Range
4.5V To 36V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNQ5160K-E
Manufacturer:
st
Quantity:
9 933
Part Number:
VNQ5160K-E
0
VNQ5160K-E
3.1.2
3.2
3.3
3.4
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests that Solution 2 is used(see below).
Solution 2: a diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (
threshold and in the status output values if the microprocessor ground is not common with
the device ground. This shift will not vary if more than one HSD shares the same
diode/resistor network.
Load dump protection
D
V
that are greater than the ones shown in the ISO T/R 7637/1 table.
Microcontroller I/Os protection
If a ground protection network is used and negative transients are present on the V
the control pins will be pulled negative. ST suggests the insertion of resistors (R
lines to prevent the μC I/Os pins from latching up.
The values of these resistors are a compromise between the leakage current of μC and the
current required by the HSD I/Os (input levels compatibility) with the latch-up limit of the μC
I/Os.
-V
Calculation example:
For V
5kΩ ≤ R
Recommended R
Open-load detection in off-state
Off-state open-load detection requires an external pull-up resistor (R
the OUTPUT pin and a positive supply voltage (V
microprocessor.
The external resistor has to be selected according to the following requirements:
CC
ld
CCpeak
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds to
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
prot
/I
latchup
= - 100V and I
≤ 65kΩ.
GND
=1kΩ) should be inserted in parallel with D
≤ R
prot
prot
value is 10kΩ.
≤ (V
latchup
OHμC
GND
Doc ID 13349 Rev 6
) in the ground line.
-V
≥ 20mA; V
IH
-V
GND
) / I
OHμC
IHmax
≥ 4.5V
PU
) like the +5V line used to supply the
GND
~
600mV) in the input
if the device drives an
Application information
PU
) connected between
prot
CC
) in the
CC
line,
line
19/30

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