VNQ830E STMicroelectronics, VNQ830E Datasheet - Page 10

• Manufacturer Part Number: VNQ830E
• Description: IC DVR QUAD HIGH SIDE 28SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ830E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 65 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

VNQ830-E
Figure 8. Application Schematic
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
10/21
GND
1) R
2) R
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
resistor.
GND
GND
GND
PROTECTION
+5V
C
600mV / 2(I
is the DC reverse ground pin current and can
V
CC
) / (-I
R
R
R
R
R
R
R
R
GND
prot
GND
prot
prot
prot
prot
prot
prot
prot
S(on)max
+5V
)
(when V
+5V
NETWORK
+5V
).
+5V
CC
<0: during reverse
STATUS2
INPUT2
STATUS1
INPUT1
STATUS3
INPUT3
STATUS4
INPUT4
GND
AGAINST
only). This
V
CC1,2
V
GND1,2
GND
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2.
D
= (-V
R
GND
CC
V
CC3,4
)
GND3,4
2
/R
GND
D
OUTPUT4
OUTPUT2
GND
OUTPUT3
S(on)max
OUTPUT1
* R
GND
) in the input thresholds
S(on)max
becomes the
GND
GND
.
D
ld
will