TLE7189F Infineon Technologies, TLE7189F Datasheet - Page 13

• Manufacturer Part Number: TLE7189F
• Description: IC DRIVER 3PH BRIDGE 48-VQFN
• Manufacturer: Infineon Technologies
• Type: High Side/Low Sider

Specifications of TLE7189F

• Applications: DC Motor Driver, 3 Phase
• Number Of Outputs: 1
• Voltage - Supply: 5.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN
• Rise Time: 400 ns
• Fall Time: 230 ns
• Supply Voltage (min): 5.5 V
• Supply Current: 110 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Bridge Type: 3-Phase Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 3
• Packages: PG-VQFN-48
• Operating Range: 5.5 - 28.0 V
• Iq: 30 ?A
• Turn On/off Current: 1.5/ 1.5 A
• D.c.-range @ 20khz: 0...100%
• Numbers Of Integrated Opamps For Load Current Measurement: 3.0
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Voltage - Load: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000248208; TLE7189F; TLE7189FINTR

5.1.2
The TLE7189F provides a feature tailored to the requirements in 12V automotive applications. Often the operation
of an application has to be assured even at 9V supply voltage or lower. Normally bridge driver ICs provide in such
conditions clearly less than 9V to the gate of the external MOSFETs, increasing their R
power dissipation.
The TLE7189F has two charge pump circuitries for external capacitors.
The operation of the charge pumps is independent upon the pulse pattern of the MOSFETs.
The output of the charge pumps are regulated. The first charge pump doubles the supply voltage as long as it is
below 8V. At 8V supply voltage and above, charge pump 1 regulates its output to 15V typically. Above 15V supply
voltage, the output voltage of charge pump 1 will increase linearly. Yet, the output will not exceed 25V.
Charge pump 2 is regulated as well but it is pumped to the voltage on Vs. Normally VDH and Vs are in the same
voltage range. The driver is not designed to have significant different voltages at VDH compared to Vs. This would
lead to reduced supply voltages for the high side output stages.
Charge pump 1 supplies the low side MOSFETS and output stages for the low side MOSFETs with sufficient
voltage to assure 10V at the MOSFETs´ gate even if the supply voltage is below 10V. Charge pump 2 supplies
the output stages for the high side MOSFETs with sufficient voltage to assure 10V at the MOSFETs´ gate. In
addition, the charge pump 1 supplies most of the internal circuits of the driver IC, including charge pump 2. Output
of charge pump 1 is the buffer capacitor CB1 which is referenced to GND.
Charge pump 2 supplies the high side MOSFETs and the output stages for the high side MOSFETs with sufficient
voltage to assure 10V at the high side MOSFET gate. Output of charge pump 2 is buffer capacitor CB2 which is
referenced to VDH.
This concept allows to drive all external MOSFETs in the complete duty cycle range of 0 to 100% without taking
care about recharging of any bootstrap capacitors.
This simplifies the use in all applications especially in motor drives with block wise commutation.
The charge pumps are only deactivated when the device is put into sleep mode via INH.
The size of the charge pump capacitors (pump capacitors CPx as well as buffer capacitors CBx) can be varied
between 1µF and 4.7µF. Yet, larger capacitor values result in higher charge pump voltages and less voltage ripple
on the charge pump buffer capacitors CBx (which supply the internal circuits as well as the external MOSFETs,
pls. see above). Besides the capacitance values the ESR of the buffer capacitors CBx determines the voltage
ripple as well. It is recommended to use buffer capacitors CBx that have small ESR.
Pls. see also
5.1.3
When the INH pin is set to low, the driver will be set to sleep mode. The INH pin switches off the complete supply
structure of the device and leads finally to an under voltage shut down of the complete driver. Enabling the device
with the INH pin means to switch on the supply structure. The device will run through power on reset during wake
up. It is recommended to perform a Reset by ENA after Wake up to remove possible ERR signals; Reset is
performed by keeping ENA pin low until the charge pump voltages have ramped up.
Enabling and disabling with the INH pin is not very fast. For fast enable / disable the ENA pin is recommended.
When the TLE7189F is in INH mode (INH is low) or when the supply voltage is not available on the Vs pin, then
the driver IC is not supplied, the charge pumps are inactive and the charge pump capacitors are discharged. Pin
CB2 (+ terminal of buffer capacitor 2) will decay to GND. When the battery voltage is still applied to VDH (- terminal
of buffer capacitor 2) the buffer capacitor 2 will slowly charged to battery voltage, yet with reversed polarity
compared to the polarity during regular operation. Hence, it is important to use a buffer capacitor 2 (CB2) that can
withstand both, +25 V during operation mode and -V
dump during INH mode, the negative voltage across CB2 will be clamped to -31 V (CB2 referenced to VDH).
Data Sheet
Operation at Vs<12V - Integrated Charge Pumps
Sleep Mode
Chapter 5.1.3
for capacitor selection.
BAT
13
during INH mode, e.g. a ceramic capacitor. In case of load
Description and Electrical Characteristics
DSon
Rev. 2.1, 2007-05-30
and the associated
TLE7189F