NCP1606ADR2G ON Semiconductor, NCP1606ADR2G Datasheet - Page 5

• Manufacturer Part Number: NCP1606ADR2G
• Description: IC POWER FACTOR CONTROLLER 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NCP1606ADR2G

• Mode: Critical Conduction (CRM)
• Current - Startup: 20µA
• Voltage - Supply: 10.3 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Output Voltage Range: 1.7 V
• Output Current: 40 uA
• Power Dissipation: 800 mW
• Operating Temperature Range: - 40 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Switching: -
• Other names: NCP1606ADR2GOSTR

RAMP CONTROL
OVER AND UNDERVOLTAGE PROTECTION
GATE DRIVE SECTION
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
ELECTRICAL C
(Unless otherwise specified: For typical values, T
1 nF, Ct = 1 nF, CS = 0 V, Control = open, ZCD = open)
t
CT(discharge)
V
I
V
V
I
OVP(HYS)
Symbol
I
V
CL(NEG)
CHARGE
OUT(start)
t
CL(NEG)
V
SD
t
V
V
V
START
t
CTMAX
t
SYNC
I
R
R
PWM
t
OVP
ZCD
t
SD
SD
OVP
UVP
rise
fall
OH
HYS
OL
H
L
Negative Active Clamp Voltage @ I
Current Capability of the Negative Active Clamp:
in normal mode (V
in shutdown mode (V
Shutdown Threshold (V
Enable Threshold (V
Shutdown Comparator Hysteresis
Zero current detection propagation delay
Minimum detectable ZCD pulse width
Drive off restart timer
Charge Current (V
Time to discharge a 1 nF Ct capacitor from V
Maximum Ct level before DRV switches off
Propagation delay of the PWM comparator
Dynamic overvoltage protection (OVP) triggering current:
NCP1606A
NCP1606B @ T
NCP1606B @ T
Hysteresis of the dynamic OVP current before the OVP latch is released:
NCP1606A
NCP1606B
Static OVP Threshold Voltage
Undervoltage protection (UVP) threshold voltage
Gate Drive Resistance:
Drive voltage rise time from 10% V
Drive voltage fall time from 90% V
Driver output voltage at V
HARACTERISTICS
R
R
R
R
OH
OH
OL
OL
@ I
@ I
@ I
@ I
J
J
= 25°C
= −40°C to +125°C
ZCD
CT
SINK
SINK
SOURCE
SOURCE
ZCD
ZCD
= 0 V)
= 300 mV)
ZCD
= 100 mA
= 20 mA
rising)
= 100 mV)
CC
= 100 mA
= 20 mA
falling)
= V
CC(on)
J
CC
CC
= 25°C. For min/max values, T
ZCD
to 90% V
to 10% V
Rating
− 200 mV and I
= −2.5 mA
http://onsemi.com
CT
CC
CC
= 3.4 V to 100 mV.
with C
with C
5
sink
DRV
DRV
= 10 mA
= 1 nF and V
= 1 nF and V
−25°C < T
−40°C < T
−25°C < T
−40°C < T
J
= −40°C to +125°C, V
CC
J
J
J
J
CC
< +125°C
< +125°C
< +125°C
< +125°C
= 12 V.
= 12 V.
0.45
0.25
Min
150
243
235
2.5
2.9
2.9
9.0
8.7
CC
35
75
34
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
= 12 V, FB = 2.4 V, C
100 mV
V
10.4
EAL
Typ
200
290
100
180
270
270
150
0.6
3.7
3.2
3.2
8.5
0.3
70
90
70
40
30
12
12
30
25
−
−
6
6
−
+
Max
0.75
12.1
11.8
100
250
350
170
300
297
297
100
220
5.0
3.3
3.4
0.4
0.2
45
18
18
10
10
80
70
−
−
−
−
DRV
=
Unit
mA
mV
mV
mV
mA
mA
mA
mA
ns
ns
ms
ns
ns
ns
ns
V
V
V
V
W
V