MAX17510ATB+T Maxim Integrated Products, MAX17510ATB+T Datasheet - Page 2

• Manufacturer Part Number: MAX17510ATB+T
• Description: IC REG DDR LOW VOLTAGE 10-TDFN
• Manufacturer: Maxim Integrated Products

Specifications of MAX17510ATB+T

• Applications: Converter, DDR
• Voltage - Input: 1.1 ~ 3.6 V
• Number Of Outputs: 1
• Voltage - Output: 0.5 ~ 1.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-TDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
IN to PGND............................................................-0.3V to +4.3V
OUT to PGND ..............................................-0.3V to (V
OUTS to AGND ............................................-0.3V to (V
V
REFIN, REFOUT, SHDN, PGOOD to AGND ..-0.3V to (V
PGND to AGND .....................................................-0.3V to +0.3V
REFOUT Short Circuit to AGND .................................Continuous
OUT Continuous RMS Current: 100s ..................................±1.6A
ELECTRICAL CHARACTERISTICS
(V
T
Low-Voltage DDR Linear Regulators
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
Input-Voltage Range
Quiescent Supply Current (V
Shutdown Supply Current (V
Quiescent Supply Current (V
Shutdown Supply Current (V
Feedback-Voltage Error
Load-Regulation Error
Line-Regulation Error
OUTS Input-Bias Current
OUTPUT
Output Adjust Range
OUT On-Resistance
Output Current Slew Rate
OUT Power-Supply Rejection
Ratio
OUT-to-OUTS Resistance
Discharge MOSFET
On-Resistance
A
CC
IN
= -40°C to +125°C for MAX17510ATB, unless otherwise noted. Typical values are at T
_______________________________________________________________________________________
to AGND.........................................................-0.3V to +4.3V
= 1.8V, V
PARAMETER
CC
= 3.3V, V
REFIN
CC
IN
CC
IN
1s......................................±2.5A
)
)
)
)
= V
R
OUTS
I
SYMBOL
DISCHARGE
I
CC(SHDN)
IN(SHDN)
R
V
I
PSRR
OUTS
V
OUTS
I
OUTS
V
I
CC
CC
IN
IN
= 1.25V, SHDN = V
Power input
Bias supply
Load = 0, V
SHDN = GND, V
SHDN = GND, REFIN = GND
Load = 0
SHDN = GND
REFIN to OUTS
I
-1A ≤ I
1.4V ≤ V
High-side MOSFET (source) (I
Low-side MOSFET (sink) (I
C
10Hz < f < 10kHz, I
C
SHDN = GND
OUT
OUT
OUT
CC
IN
IN
= ±200mA
+ 0.3V)
+ 0.3V)
= 100µF, I
= 100µF
+ 0.3V)
OUT
IN
≤ 3.3V, I
≤ +1A
REFIN
CC
, circuit of Figure 1, T
CONDITIONS
OUT
REFIN
> 0.45V
OUT
OUT
Continuous Power Dissipation (T
Operating Temperature Range
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
= 0.1A to 2A
T
T
10-Pin 3mm x 3mm Thin DFN
(derated 24.4mW/°C above +70°C)...........................1951mW
MAX1510ETB...................................................-40°C to +85°C
MAX17510ATB ..............................................-40°C to +125°C
> 0.45V
A
A
= ±100mA
= 200mA,
= +25°C
= -40°C to +125°C
OUT
OUT
= -0.1A)
= 0.1A)
J
= T
A
A
= +25°C.) (Note 1)
= -40°C to +85°C for MAX1510ETB, T
MIN
1.1
2.7
-15
0.5
-4
-6
-1
A
= +70°C)
TYP
0.14
0.14
350
0.7
0.4
0.1
50
80
12
0
1
3
8
MAX
0.25
0.25
+15
600
100
3.6
3.6
1.3
1.5
+4
+6
+1
10
10
UNITS
A/µs
mA
mA
mV
mV
mV
µA
µA
µA
dB
kΩ
Ω
Ω
V
V
J
=