ILD621GB Vishay, ILD621GB Datasheet - Page 3

• Manufacturer Part Number: ILD621GB
• Description: OPTOCPLR PHOTOTRAN 2CH 100% 8DIP
• Manufacturer: Vishay

Specifications of ILD621GB

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 2
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 8-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 2
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 2
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1325-5; ILD621GBGI; ILD621GBGI

Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83654
Rev. 1.5, 20-Dec-07
amb
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Thermal resistance, junction to lead
COUPLER
Capacitance (input to output)
Insulation resistance
Channel to channel insulation
Collector emitter saturation voltage
CURRENT TRANSFER RATIO
PARAMETER
Channel/channel
CTR match
Current transfer ratio
(collector emitter
saturated)
Current transfer ratio
(collector emitter)
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
On time
Rise time
Off time
Fall time
Propagation H to L
Propagation L to H
= 25 °C, unless otherwise specified.
I
I
I
I
I
I
F
F
F
F
F
F
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
For technical questions, contact: [e-mail]
I
I
V
I
I
I
Optocoupler, Phototransistor Output
F
F
F
F
F
V
CC
CC
CC
CC
CC
CC
V
CE
TEST CONDITION
= 8.0 mA, I
= 1.0 mA, I
= 5.0 mA, V
= 1.0 mA, V
= 5.0 mA, V
TEST CONDITION
IO
TEST CONDITION
R
= 5.0 V, f = 1.0 MHz
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 5.0 V, R
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
V
V
I
V
F
IO
CE
R
= 10 mA
= 6.0 V
= 500 V
(Dual, Quad Channel)
= 24 V
CE
CE
CE
CE
CE
L
L
L
L
L
L
= 2.4 mA
= 0.2 mA
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 5.0 V
= 0.4 V
= 5.0 V
ILD621/ILD621GB/ILQ621/ILQ621GB
ILD621GB
ILQ621GB
ILQ621GB
ILQ621GB
ILD621GB
ILD621GB
ILQ621
ILD621
ILD621
ILQ621
ILD621
ILQ621
PART
PART
PP
PP
PP
PP
PP
PP
SYMBOL
SYMBOL
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
V
V
CTRX/
R
R
CTRY
I
I
C
C
t
t
CEO
CEO
CEsat
CEsat
C
V
THJL
THJL
t
t
PHL
PLH
I
CE
on
t
off
R
t
IO
O
F
CEsat
CEsat
CEsat
CEsat
r
f
CE
CE
CE
CE
1 to 1
MIN.
10
MIN.
MIN.
500
100
100
1.0
0.8
30
30
50
50
12
Vishay Semiconductors
TYP.
TYP.
TYP.
1.15
0.01
750
500
200
200
6.8
3.0
2.0
2.3
2.0
1.1
2.5
40
10
20
60
60
80
80
MAX.
MAX.
3 to 1
MAX.
100
600
600
600
600
1.3
0.4
0.4
10
50
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UNIT
UNIT
UNIT
VAC
K/W
K/W
µA
nA
µA
pF
pF
pF
µs
µs
µs
µs
µs
µs
Ω
%
%
%
%
%
%
%
%
%
V
V
V
3