MT9VDDT6472AY-40BF1 Micron Technology Inc, MT9VDDT6472AY-40BF1 Datasheet - Page 12

• Manufacturer Part Number: MT9VDDT6472AY-40BF1
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472AY-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1178; MT9VDDT6472AY-40BF1

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–20; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–20; 0°C
pdf: 09005aef80a43e7d, source: 09005aef80a43d77
DDA9C16_32_64x72AG.fm - Rev. B 9/04 EN
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT: Any input 0V
V
other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT:
(DQs are disabled; 0V
OUTPUT LEVELS:
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
IN
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to Vs
Relative to V
V
DD
PARAMETER/CONDITION
, V
REF
PARAMETER/CONDITION
OUT
OUT
pin 0V
REF
DD
DD
SS
SS
Q Supply
= V
= 0.373V, maximum V
Supply
and Inputs
SS
DD
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
Q - 0.373V, minimum V
V
OUT
IN
1.35V (All
V
DD
Q)
REF
128MB, 256MB, 512MB (x72, ECC, SR), PC3200
, maximum V
Command/Address,
RAS#, CAS#, WE#,
CKE, S#
CK, CK#
DM
DQ, DQS
REF
, minimum V
T
T
A
A
+70°C; V
+70°C; V
TT
SYMBOL
V
V
V
)
REF
IH
IL
12
TT
(AC)
(AC)
(AC)
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DD
DD
SYMBOL
V
V
V
V
Voltage on I/O Pins
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
= V
= V
IH
V
IL
V
I
I
DD
DD
I
OH
REF
(AC)
I
OZ
OL
(DC)
TT
L
Relative to V
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
0.49 x V
DD
DD
Q
Q
A
184-Pin DDR SDRAM UDIMM
REF
(ambient) . . . . . . . . . . . . . . . . . . . . . .0°C to +70°C
Q = +2.6V ±0.1V
Q = +2.6V ±0.1V
MIN
+ 0.310
–
0.49 x V
V
V
REF
DD
REF
-16.8
MIN
16.8
-0.3
-18
Q
2.5
2.5
-6
-2
-5
+ 0.15
- 0.04
SS
DD
. . . . . . . . . . . . .-0.5V to V
Q 0.51 x V
0.51 x V
V
REF
MAX
V
V
V
REF
REF
- 0.310
DD
–
MAX
2.7
2.7
18
DD
+ 0.04
6
2
5
–
–
- 0.15
+ 0.3
Q
DD
Q
UNITS
UNITS
mA
mA
V
V
V
µA
µA
µA
µA
©2004 Micron Technology, Inc.
V
V
V
V
V
V
DD
12, 25, 35
12, 25, 35
32, 36, 39
NOTES
NOTES
32, 36
33, 36
Q +0.5V
6, 39
7, 39
25
25
47
47
6