MT36VDDF25672G-40BD2 Micron Technology Inc, MT36VDDF25672G-40BD2 Datasheet - Page 14

• Manufacturer Part Number: MT36VDDF25672G-40BD2
• Description: MODULE DDR SDRAM 2GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36VDDF25672G-40BD2

• Memory Type: DDR SDRAM
• Memory Size: 2GB
• Speed: 200MHz
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 512Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 3.6A
• Number Of Elements: 36
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1120

Table 11:
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. G 9/08 EN
Parameter/Condition
Operating one bank active-precharge current:
t
Address and control inputs changing once every two clock cycles
Operating one bank active-read-precharge current: BL = 2;
t
changing once per clock cycle
Precharge power-down standby current: All device banks idle; Power-
down mode;
Idle standby current: CS# = HIGH; All device banks idle;
CKE = HIGH; Address and other control inputs changing once per clock
cycle; V
Active power-down standby current: One device bank active; Power-
down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One device bank
active;
twice per clock cycle; Address and other control inputs changing once per
clock cycle
Operating burst read current: BL = 2; Continuous burst reads; One
device bank active; Address and control inputs changing once per clock
cycle;
Operating burst write current: BL = 2; Continuous burst writes; One
device bank active; Address and control inputs changing once per clock
cycle;
Auto refresh current
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four device bank
interleaving reads (BL = 4) with auto precharge;
t
READ or WRITE commands
CK =
RC =
CK =
t
t
t
t
t
RC (MIN);
CK (MIN); DQ and DQS inputs changing once per clock cycle;
CK =
CK =
CK (MIN); Address and control inputs change only during active
t
IN
RC =
= V
t
t
REF
CK (MIN); I
CK (MIN); DQ and DQS inputs changing twice per clock cycle
t
t
t
RAS (MAX);
I
Values are for the MT46V128M4 DDR SDRAM only and are computed from values specified in the
512Mb (128 Meg x 4) component data sheet
CK =
CK =
DD
for DQ and DQS
t
CK =
Specifications and Conditions – 2GB
t
t
Notes:
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
t
CK (MIN); I
OUT
t
CK =
= 0mA
1. Value calculated as one module rank in this operating condition; all other module ranks are
2. Value calculated reflects all module ranks in this operating condition.
in I
t
CK (MIN); DQ and DQS inputs changing
OUT
DD
2P (CKE LOW) mode.
= 0mA; Address and control inputs
t
1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM RDIMM
RC =
t
RC =
t
t
RFC =
RFC = 7.8125µs
t
RC (MIN);
t
t
CK =
RC (MIN);
t
RFC (MIN)
14
t
CK (MIN);
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol -40B
I
I
I
I
I
I
I
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
DD
4W
3N
5A
2P
3P
4R
2F
0
1
5
6
7
1
1
2
2
1
2
2
2
1
2
2
1
12,420 10,440 10,440 10,080
2,880
3,420
1,980
1,620
2,160
3,510
3,600
8,190
180
396
180
Electrical Specifications
2,430
2,970
1,620
1,260
1,800
3,060
3,240
7,380
-335
180
360
180
©2002 Micron Technology, Inc. All rights reserved.
2,430
2,970
1,620
1,260
1,800
3,060
2,880
7,290
-262
180
360
180
-26A/
2,160
2,700
1,440
1,080
1,620
2,700
2,520
6,390
-265
180
360
180
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA