VSMG3700-GS08 Vishay, VSMG3700-GS08 Datasheet - Page 2

• Manufacturer Part Number: VSMG3700-GS08
• Description: EMITTER IR PLCC-2 HI SPD 850NM
• Manufacturer: Vishay

Specifications of VSMG3700-GS08

• Peak Wavelength: 850nm
• Forward Current If(av): 100mA
• Rise Time: 20ns
• Fall Time Tf: 13ns
• Radiant Intensity: 10mW/Sr
• Supply Voltage Range: 1.5V
• Viewing Angle: 120°
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 6mW/sr @100mA
• Wavelength: 850nm
• Voltage - Forward (vf) Typ: 1.5V
• Orientation: Top View
• Mounting Type: Surface Mount
• Package / Case: PLCC-2
• Operating Temperature Range: -40°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 751-1256-2

VSMG3700
Vishay Semiconductors
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
BASIC CHARACTERISTICS (T
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Cut-off frequency
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
21339
200
180
160
140
120
100
80
60
40
20
0
0
R
10 20
thJA
T
amb
= 250 K/W
- Ambient Temperature (°C)
30 40 50 60 70 80 90 100
e
p
F
For technical questions, contact:
J-STD-051, soldered on PCB
amb
I
High Speed Infrared Emitting Diode,
DC
V
acc. figure 8, J-STD-020
I
I
I
R
F
F
F
t
= 70 mA, I
850 nm, GaAlAs Double Hetero
p
I
= 0 V, f = 1 MHz, E = 0
I
= 100 mA, t
= 100 mA, t
= 100 mA, t
= 25 °C, unless otherwise specified)
TEST CONDITION
TEST CONDITION
F
F
/T = 0.5, t
= 1 A, t
= 1 A, t
amb
I
I
I
I
I
I
t
F
F
F
F
F
F
p
I
F
V
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 μs
R
= 1 mA
= 25 °C, unless otherwise specified)
= 5 V
p
p
AC
p
= 100 μs
= 100 μs
p
p
p
= 100 μs
= 30 mA pp
= 20 ms
= 20 ms
= 20 ms
[e-mail]
SYMBOL
TKλ
TK
TKφ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
f
d
t
t
SYMBOL
R
e
e
c
F
F
e
p
r
f
VF
j
e
p
R
21340
T
I
T
T
I
FSM
V
P
FM
amb
thJA
I
T
stg
F
sd
R
V
j
120
100
80
60
40
20
0
0
MIN.
10
R
6
thJA
T
amb
20 30 40
= 250 K/W
- Ambient Temperature (°C)
- 40 to + 100
- 40 to + 85
VALUE
- 0.35
TYP.
- 1.8
± 60
0.25
0.44
100
200
180
100
260
250
125
100
850
1.5
1.5
2.3
10
40
40
20
13
18
5
50 60 70 80
Document Number: 81471
MAX.
1.8
10
22
Rev. 1.4, 06-Oct-10
90 100
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
A
V
mW/sr
mW/sr
mV/K
UNIT
nm/K
MHz
%/K
mW
mm
deg
nm
nm
μA
pF
ns
ns
V
V