LN58 Panasonic - SSG, LN58 Datasheet

IR LED 950NM 35 DEG SIDE VIEW

LN58

Manufacturer Part Number
LN58
Description
IR LED 950NM 35 DEG SIDE VIEW
Manufacturer
Panasonic - SSG
Datasheet

Specifications of LN58

Current - Dc Forward (if)
50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
70°
Orientation
Side View
Mounting Type
Through Hole
Package / Case
Radial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Radiant Intensity (ie) Min @ If
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LN58
Manufacturer:
PANASONI
Quantity:
40 000
Infrared Light Emitting Diodes
LN58
GaAs Infrared Light Emitting Diode
For optical control systems
 Features
 Absolute Maximum Ratings T
Note) * : f = 100 Hz, Duty cycle = 0.1%
 Electro-Optical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: January 2009
 High-power output, high-efficiency: P
 Emitted light spectrum suited for silicon photodetectors
 Infrared light emission close to monochromatic light: λ
 Small size, thin side-view type package
Power dissipation
Forward current
Pulse forward current
Reverse voltage
Operating ambient temperature
Storage temperature
Radiant power
Reverse current
Forward voltage
Terminal capacitance
Peak emission wavelength
Spectral half band width
Half-power angle
2. Cutoff frequency: 1 MHz
3. * : A light detection element uses a silicon diode have proofread a load with a standard device.
f
C
: 10 × log
*
Parameter
Parameter
P
*
O
P
at f = 50 kHz
O
at f = f
C
= –3
a
O
= 25°C
= 3.5 mW (typ.)
This product complies with the RoHS Directive (EU 2002/95/EC).
a
= 25°C±3°C
Symbol
Symbol
T
T
V
Δλ
P
I
P
V
λ
I
C
I
θ
FP
opr
stg
R
D
F
O
P
R
F
t
P
I
V
I
V
I
I
The angle when the radiant power is halved.
= 950 nm (typ.)
–30 to +100
F
F
F
F
–25 to +85
R
R
= 50 mA
= 50 mA
= 50 mA
= 50 mA
Rating
= 3 V
= 0 V, f = 1 MHz
75
50
SHC00013DED
1
3
Conditions
Unit
mW
mA
°C
°C
A
V
Min
1.8
Typ
950
3.5
35
50
35
Max
1.5
10
Unit
mW
µA
nm
nm
pF
V
°
1

Related parts for LN58

LN58 Summary of contents

Page 1

... This product complies with the RoHS Directive (EU 2002/95/EC). Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems  Features  High-power output, high-efficiency 3.5 mW (typ.) O  Emitted light spectrum suited for silicon photodetectors  Infrared light emission close to monochromatic light: λ ...

Page 2

... This product complies with the RoHS Directive (EU 2002/95/EC). LN58 I  − 100 Ambient temperature T (°  µs W Duty cycle = 0. 25° − Forward voltage V (  1 1 0.8 0.4 0 − 120 Ambient temperature T (°  Duty cycle 25° −1 10 −2 10 −3 10 −2 10 − ...

Page 3

... Relative luminous intensity  λ 100 25° 860 900 940 980 1 020 1 060 1 100 Wavelength λ (nm) Directive characteristics Modulation output 0° 10° 20° 100 90 80 30° 40° 50° 30 60° 20 70° 10 −1 80° 90° 10 −2 1 SHC00013DED LN58  25° Frequency f (kHz) 3 ...

Page 4

... This product complies with the RoHS Directive (EU 2002/95/EC). LN58  Package (Unit: mm) LETLSN2S0003  Pin name 1: Cathode 2: Anode 4 SHC00013DED ...

Page 5

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

Related keywords