LNA2W01L Panasonic - SSG, LNA2W01L Datasheet

IR LED 950NM 18 DEG DOUBLE END

LNA2W01L

Manufacturer Part Number
LNA2W01L
Description
IR LED 950NM 18 DEG DOUBLE END
Manufacturer
Panasonic - SSG
Datasheet

Specifications of LNA2W01L

Current - Dc Forward (if)
50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.25V
Viewing Angle
36°
Orientation
Top View
Mounting Type
Surface Mount
Package / Case
Non-Standard SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Radiant Intensity (ie) Min @ If
-
Other names
LN57
LN57

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LNA2W01L
Manufacturer:
PANASONI
Quantity:
40 000
Part Number:
LNA2W01L/LN57
Manufacturer:
TECCOR
Quantity:
4 000
Infrared Light Emitting Diodes
LNA2W01L
GaAs Infrared Light Emitting Diode
For optical control systems
*
f = 100 Hz, Duty cycle = 0.1 %
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
High-power output, high-efficiency : P
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light :
Narrow directivity :
Ultra-miniature double ended package
Absolute Maximum Ratings (Ta = 25˚C)
Features
Electro-Optical Characteristics (Ta = 25˚C)
P
= 950 nm (typ.)
Parameter
Parameter
= 18 deg. (typ.)
Symbol
Symbol
I
T
T
V
V
P
P
FP
I
C
I
opr
stg
R
F
D
O
P
R
F
t
*
O
= 4.5 mW (typ.)
–30 to +100
–25 to +85
I
I
I
I
V
V
The angle in which radiant intencity is 50%
Ratings
F
F
F
F
R
R
= 50mA
= 50mA
= 50mA
= 50mA
75
50
= 3V
= 0V, f = 1MHz
1
3
Conditions
Unit
mW
mA
˚C
˚C
A
V
1
Type number : Cathode mark (Red)
min
3
10.0 min.
ø1.8
3.2 0.3
1.8
1.25
950
typ
4.5
50
35
18
2.8 0.2
3.2 0.3
R0.9
max
1.8
1.5
10
10.0 min.
Unit : mm
1: Cathode
2: Anode
Unit
mW
deg.
nm
nm
pF
V
A
2
1

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LNA2W01L Summary of contents

Page 1

... Infrared Light Emitting Diodes LNA2W01L GaAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : P Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : = 950 nm (typ.) P Narrow directivity : = 18 deg. (typ.) Ultra-miniature double ended package Absolute Maximum Ratings (Ta = 25˚ ...

Page 2

... LNA2W01L I — – 100 Ambient temperature Ta (˚ — Duty Cycle = 0. 25˚ – Forward voltage V ( — 1 50mA F 1.2 10mA 1mA 0.8 0.4 0 – 120 Ambient temperature Ta (˚ — Duty cycle 25˚ –1 10 –2 10 –3 10 –2 – Duty cycle (%) P — 120 Ta = 25˚C ...

Page 3

... Infrared Light Emitting Diodes Spectral characteristics 100 I = 50mA 25˚ 860 900 940 980 1020 1060 1100 Wavelength (nm) Directivity characteristics 0˚ 10˚ 20˚ 100 90 80 30˚ 40˚ 50˚ 30 60˚ 20 70˚ 80˚ 90˚ LNA2W01L Frequency characteristics 25˚ –1 10 – Frequency f (kHz) 3 ...

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