OP245PS TT Electronics/Optek Technology, OP245PS Datasheet

OP245PS

Manufacturer Part Number

OP245PS

Description

DIODE INFRARED EMITTING PLASTIC

Manufacturer

TT Electronics/Optek Technology

Datasheet

1.OP245PS.pdf (2 pages)

Specifications of OP245PS

Current - Dc Forward (if)

50mA

Wavelength

850nm

Voltage - Forward (vf) Typ

1.7V

Viewing Angle

36°

Orientation

Side View

Mounting Type

Through Hole

Package / Case

Radial

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Radiant Intensity (ie) Min @ If

Other names

365-1005

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Prod uct Bul le tin OP245PS

November 2000

Plas tic Point Source In fra red Emitting Diode

Type OP245PS

Fea tures

De scrip tion

The OP245PS is an 850 nm, infrared

emItting diode molded in IR transmissive

amber-tinted epoxy packages. The

side-looking package is for use in PC

board mounted slotted switches or as

easily mounted interrupt detectors.

The stable V

characteristic make them ideal for

applications where voltage is limited

(such as battery operation).

The low t

speed operations.

Op tek Tech nol ogy, Inc.

Point source irradiance pattern

Wavelength matched to silicon’ s peak

response

Fast switching speed

Side-looking package for space limited

applications

make them ideal for high

vs. Temperature

1215 W. Crosby Road

Ab so lute Maxi mum Rat ings (T

Re verse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V

Con tin u ous For ward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Peak For ward Cur rent (2 s pulse width, 0.1% duty cy cle). . . . . . . . . . . . . . . . . . 1.0 A

Stor age and Op er ating Tem per a ture Range . . . . . . . . . . . . . . . . . . . -40 C to +100 C

Lead Sol dering Tem per a ture [1/16 inch (1.6mm) from case for 5 sec. with sol der ing

iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 C

Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW

NOTES:

(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 seconds maximum when flow

(2) De rate lin early 1.33 mW/ C above 25 .

(3) E

sol der ing. A maximum of 20 grams force may be ap plied to the leads when sol der ing.

0.180” (4.57 mm) in di am e ter, per pen dic u lar to and cen tered on the me chan i cal axis of the

lens, and 0.653” (16.6 mm) from the mea sure ment sur face. E

uni form within the mea sured area.

e(APT)

is a mea sure ment of the av er age apertured ra di ant in ci dence upon a sens ing area

Car roll ton, Texas 75006

= 25

Anode

(972) 323- 2200

Cathode

C un less oth er wise noted)

e(APT)

is not nec es sar ily

Fax (972) 323- 2396

(1)

(2)

Related parts for OP245PS

OP245PS Summary of contents

Page 1

... Wavelength matched to silicon’ s peak response Fast switching speed Side-looking package for space limited applications De scrip tion The OP245PS is an 850 nm, infrared emItting diode molded in IR transmissive amber-tinted epoxy packages. The side-looking package is for use in PC board mounted slotted switches or as easily mounted interrupt detectors. ...

Page 2

... Type OP245PS Elec tri cal Char ac ter is tics ( SYM BOL PA RAM E TER E Apertured Irradiance e(APT) V Forward Voltage F I Reverse Current R Wavelength at Peak Emission p Spectral Bandwidth Between Half Power B Points Emission Angle at Half Power HP t Rise Time r t Fall Time f Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble. ...

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