STEVAL-ILB008V1 STMicroelectronics, STEVAL-ILB008V1 Datasheet - Page 6

• Manufacturer Part Number: STEVAL-ILB008V1
• Description: BOARD EVAL BALLAST FOR L6585DE
• Manufacturer: STMicroelectronics
• Type: Power Factor Correctionr

Specifications of STEVAL-ILB008V1

• Main Purpose: Lighting, Ballast Control
• Embedded: No
• Utilized Ic / Part: L6585DE
• Primary Attributes: 4 x 18w, T8 Lamps
• Secondary Attributes: Preheating Ignition
• Input Voltage: 90 V to 265 V
• Product: Power Management Modules
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: L6585DE
• Other names: 497-10544

Pin settings
6/33
Table 1.
Pin n.
13
14
15
16
17
18
19
20
Name
HBCS
BOOT
GND
VCC
OUT
HSD
PFG
LSD
Pin functions (continued)
PFC gate driver output. The totem pole output stage is able to drive power
MOSFETs with a peak current of 300 mA source and 600 mA sink (typ. values).
3-level half-bridge current monitor for current control.
The current flowing through the HB MOSFET is sensed through a resistor. The
resulting voltage is applied to this pin.
First level threshold (1.05 V, active during run mode): in case of threshold
crossing the IC reacts with frequency increase in order to limit the half-bridge
(and lamp) current.
Second level threshold (1.6 V, active during ignition and run mode):
- Ignition: in case of threshold crossing during the frequency shift, the IC reacts
with frequency increase in order to limit the lamp voltage and preventing
operation below resonance.
- Run mode: in case of threshold crossing because of current spikes (due, for
example, to capacitive mode / cross-conduction) longer than 200 ns the
L6585DE is latched in low consumption mode to avoid damage to the
MOSFETs.
Third level threshold (2.75 V, active during ignition and run mode):
- Ignition: in case of threshold crossing during frequency shift (e.g. caused by
choke saturation), the IC latches to avoid damage to the MOSFETs.
- Run mode: in case of threshold crossing by a hard switching event (spike
duration equal to around 40 ns) an internal counter is increased. After around
350 (typ.) subsequent hard switching events the IC is latched in low consumption
mode.
Ground.
Low side driver output: the output stage can deliver 290 mA source and 480 mA
sink (typ. values).
Supply voltage of both the signal part of the IC and the gate driver.
Clamped with a Zener inside.
High-side driver floating reference. This pin must be connected close to the
source of the high side power MOSFET.
High-side driver output: the output stage can deliver 290 mA source and 480 mA
sink (typ. values).
Bootstrapped supply voltage. Bootstrap capacitor must be connected between
this pin and OUT pin.
Patented, integrated circuitry replaces the external bootstrap diode by means of
a high voltage DMOS, synchronously driven with the low side power MOSFET.
Function
L6585DE