EVAL-AD5433EBZ Analog Devices Inc, EVAL-AD5433EBZ Datasheet - Page 6

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EVAL-AD5433EBZ

Manufacturer Part Number
EVAL-AD5433EBZ
Description
BOARD EVAL FOR AD5433
Manufacturer
Analog Devices Inc
Datasheet

Specifications of EVAL-AD5433EBZ

Number Of Dac's
1
Number Of Bits
10
Outputs And Type
1, Differential
Sampling Rate (per Second)
20.4M
Data Interface
Parallel
Settling Time
35ns
Dac Type
Current
Voltage Supply Source
Single
Operating Temperature
-40°C ~ 125°C
Utilized Ic / Part
AD5433
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
AD5424/AD5433/AD5445
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
V
V
I
Logic Inputs and Output
Operating Temperature Range
Storage Temperature Range
Junction Temperature
16-Lead TSSOP θ
20-Lead TSSOP θ
20-Lead LFCSP θ
Lead Temperature, Soldering (10 sec)
IR Reflow, Peak Temperature (<20 sec)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
OUT
DD
REF
A
Extended Industrial (Y Version)
= 25°C, unless otherwise noted.
1, I
, R
to GND
FB
OUT
to GND
2 to GND
JA
JA
JA
Thermal Impedance
Thermal Impedance
Thermal Impedance
1
Rating
–0.3 V to +7 V
–12 V to +12 V
–0.3 V to +7 V
–0.3 V to V
–40°C to +125°C
–65°C to +150°C
150°C
150°C/W
143°C/W
135°C/W
300°C
235°C
DD
+ 0.3 V
Rev. B | Page 6 of 32
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1
Overvoltages at DBx, CS , and R/ W , are clamped by internal diodes.

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