10 Jelight Company, 10 Datasheet - Page 2

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10

Manufacturer Part Number
10
Description
ERASER CHIP HOLDS 12 ICS
Manufacturer
Jelight Company
Series
CHIPhERASER®r
Type
EPROM Eraserr
Datasheets

Specifications of 10

Maximum Number Of Ic's
12
Maximum Time
Unlimited (No Timer)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
JEL10
EPROM eraser - Wafer cleaner
http://www.jelight.com/eprom-erasers.htm
MODEL #
CAPACITY
Individual EPROMS*
3" Wafers
4" Wafers
5" Wafers
6" Wafers
8" Wafers
ERASING AREA
(Tray in inches)
Width
Digital timer and audible alarm with
automatic shut-off for accurate operation.
Conductive foam will protect your EPROMs
against ESD
Deep drawer for processing loaded P.C.
board
How Do EPROMs Work?
The basic memory element was developed by Frohman-Bentchkowsky at
Intel Corporation and was known as the Floating-Gate-Avalanche-Injection
MOS (FAMOS) transistor. It was essentially a silicon gate MOS field effect
transistor in which no connection was made to the gate. The gate was in
fact electrically “floating” in an insulating layer of silicon dioxide. The
devices have been fabricated in two structures: p-channel and n-channel.
The p-channel devices were the first EPROMs available commercially, but
many devices are now using n-channel technology. N-channel MOS
devices have the advantage of being able to function with a single power
supply.
By application of sufficiently large potential difference between the source
and drain, charge can be injected into the “floating” gate which induces a
charge in the substrate. The source-to-drain impedance changes and a “p-
channel” or “n-channel” is created, depending upon the type of substrate.
The presence or absence of conduction is the principle of data storage.
Application of short wave (254 nm) ultraviolet radiation causes the gate
charge to leak away and restores the device to its original unprogrammed
state. EPROM manufacturers provide “nominal erasing energies” to their
devices; the amount of UV energy required to erase a chip’s memory.
Erasing time can be calculated using following formula:
Most EPROMs have a nominal erasing energy of 15W-sec/cm². Some
chips, however, require as little as 6 or 10W-sec/cm², or as much as 25W-
sec/cm², for complete erasure.
2436
918
96
54
28
24
12
36.00
1630
510
50
28
18
10
6
30.50
1224
306
32
18
8
8
3
24.00
9290
153
16
9
4
4
12.00
356
75
6
2
I
1
6.78
20
20
3.75
10
12
2.00
2436-220 1630-220 1224-220 9290-220 35
918
96
54
28
24
12
36.00
510
50
28
18
10
6
30.50
306
32
18
8
8
3
24.00
Page 2 of 3
153
16
9
4
4
1
12.00
1/3/2003
75
6
2
2
1
6.7