SMLVT3V3 STMicroelectronics, SMLVT3V3 Datasheet - Page 3

• Manufacturer Part Number: SMLVT3V3
• Description: DIODE TRANSIL LOW VOLT SMB
• Manufacturer: STMicroelectronics
• Series: TRANSIL™r

Specifications of SMLVT3V3

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 4.1V
• Power (watts): 600W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 10.3 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 64.4 V
• Termination Style: SMD/SMT
• Peak Surge Current: 40 A
• Peak Pulse Power Dissipation: 600 W
• Capacitance: 5200 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.95 (Max) mm W x 4.6 (Max) mm L
• Capacitance, Junction: 5200 pF
• Current, Reverse: 1 mA
• Current, Surge: 100 A
• Package Type: DO-214AA (SMB)
• Power Dissipation: 600 W
• Primary Type: Module
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +175 °C
• Voltage, Reverse: 3.3 V
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 4.1V
• Reverse Stand-off Voltage: 3.3V
• Leakage Current (max): 200uA
• Peak Pulse Current: 200A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 175C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2496-2

SMLVT3V3
Figure 3.
Figure 5.
Figure 7.
10
8
6
4
0.1
V
CL
(V)
Clamping voltage versus peak pulse
current (exponential waveform,
maximum values)
Peak forward voltage drop
versus peak forward current
(typical values)
Relative variation of leakage current
versus junction temperature
1.0
I
pp
(A)
tp=1ms
10.0
tp=20
µs
100.0
Figure 4.
Figure 6.
5000
4000
3000
2000
1000
1.00
0.10
0.01
1.0E-03
1
C(pF)
Recommended pad layout
1.0E-02
Junction capacitance versus
reverse applied voltage
(typical values)
Transient thermal impedance,
junction to ambient, versus pulse
duration (PCB - FR4, with
recommended pad layout)
1.0E-01
1.0E+00
2
t
P
V
(µs)
R
(V)
1.0E+01
3
Characteristics
1.0E+02
F=1MHz
Tj=25°C
4
1.0E+03
5
3/7