SLVU2.8-8A1 STMicroelectronics, SLVU2.8-8A1 Datasheet - Page 3

• Manufacturer Part Number: SLVU2.8-8A1
• Description: TVS DIODE 4CH BIDIR 15V 8-SOIC
• Manufacturer: STMicroelectronics
• Series: SLVUr

Specifications of SLVU2.8-8A1

• Voltage - Reverse Standoff (typ): 2.8V
• Voltage - Breakdown: 15V
• Power (watts): 600W
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channels: 8 Channels
• Clamping Voltage: 15 V
• Operating Voltage: 12 V
• Breakdown Voltage: 2.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 30 A
• Peak Pulse Power Dissipation: 600 W
• Capacitance: 3 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 4 mm W x 5 mm L x 1.75 mm H
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10116; 497-10116-2

SLVU2.8
Figure 2.
Figure 4.
Figure 6.
100
10
5
5
4
4
3
3
2
2
1
1
0
0
1
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
25
C(pF)
I (nA)
r
0
P [T initial] / P [T initial = 25 °C]
PP
j
25
Relative peak pulse power versus
initial junction temperature
Junction capacitance versus
frequency (SLVU2.8-8A1)
Leakage current versus junction
temperature (typical values)
50
PP
j
50
75
V osc = 30 mV RMS
75
Vr = Vrm
100
T j = 25 °C
100
100
125
125
SLVU2.8-8A1
Pin 1- 2
Pin 3- 4
Pin 5- 6
Pin 7- 8
F(MHz)
Doc ID 16191 Rev 1
T (°C)
150
j
1000
150
Figure 3.
Figure 5.
Figure 7.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
10
C(pF)
0
C(F)
-2
-
-
-4
-
-
-6
-
-
-8
-
-
0
300k
dB
1M
Junction capacitance versus
frequency (SLVU2.8-4A1)
Junction capacitance versus
reverse applied voltage
(typical values)
S21 attenuation (typical value)
3M
1
V osc = 30 mV RMS
10M
T j = 25 °C
100
30M
100M 300M
2
Characteristics
V osc = 30 mV
SLVU2.8-8A1
SLVU2.8-4A1
SLVU2.8-4A1
F = 1 MHz
T j = 25 °C
F(Hz)
Pin 1- 2
Pin 3- 4
Pin 5- 6
Pin 7- 8
1G
1G
F(MHz)
V (V)
3G
R
RMS
1000
3
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