ESD5B5.0ST1G ON Semiconductor, ESD5B5.0ST1G Datasheet - Page 2

• Manufacturer Part Number: ESD5B5.0ST1G
• Description: TVS BIDIRECT 50W SOD523
• Manufacturer: ON Semiconductor

Specifications of ESD5B5.0ST1G

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.8V
• Power (watts): 50W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Polarity: Bidirectional
• Channels: 1 Channel
• Operating Voltage: 5 V
• Breakdown Voltage: 7.8 V
• Termination Style: SMD/SMT
• Peak Pulse Power Dissipation: 50 W
• Capacitance: 32 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 0.8 mm W x 1.2 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ESD5B5.0ST1G; ESD5B5.0ST1GOSTR

*Other voltages available upon request.
2. V
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
ELECTRICAL CHARACTERISTICS
(T
*See Application Note AND8308/D for detailed explanations of
ELECTRICAL CHARACTERISTICS
ESD5B5.0ST1G
Symbol
A
datasheet parameters.
V
V
= 25°C unless otherwise noted)
I
RWM
V
I
PP
I
BR
BR
R
T
Device*
C
is measured with a pulse test current I
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC 61000-4-2
Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
V
Max
RWM
(V)
5.0
Parameter
@ V
PP
I
R
T
Max
1.0
(mA)
RWM
(T
RWM
A
T
= 25°C unless otherwise noted, V
at an ambient temperature of 25°C.
Min
5.8
V
BR
(Note 2)
(V) @ I
ESD5B5.0ST1G
http://onsemi.com
Max
7.8
T
2
mA
1.0
I
T
F
Figure 2. ESD Clamping Voltage Screenshot
= 0.9 V Max. @ I
C (pF) @ V
Negative 8 kV Contact per IEC 61000-4-2
V
C
f = 1 MHz
V
Typ
32
BR
Bi-Directional TVS
R
V
= 0 V,
RWM
F
I
= 10 mA for all types)
PP
I
I
R
T
I
I
I
I
PP
R
T
Per IEC61000-4-2 (Note 3)
V
RWM
Figures 1 and 2
See Below
V
BR
V
C
V
C
V